一种适用于低压差分信号驱动电路的带隙基准源设计

王轩; 刘洁; 赖晓玲; 周国昌; 王倩琼

Chinese

您当前的位置：

首页 >

文章列表页 >

一种适用于低压差分信号驱动电路的带隙基准源设计

更新时间：2026-09-04

- 一种适用于低压差分信号驱动电路的带隙基准源设计
- A novel design of band-gapreference for LVDS
- 微电子学与计算机 2020年37卷第2期页码：75-79
- 作者机构：
  
  西安空间无线电技术研究院,陕西,西安,710100
- 作者简介：
- 基金信息：
- DOI：
  中图分类号：
- 纸质出版：2020
- 稿件说明：
移动端阅览
王轩, 刘洁, 赖晓玲, 周国昌, 王倩琼. 一种适用于低压差分信号驱动电路的带隙基准源设计[J]. 微电子学与计算机, 2020, 37(2): 75-79.

WANG Xuan, LIU Jie, LAI Xiao-ling, et al. A novel design of band-gapreference for LVDS[J]. 2020, 37(2): 75-79.
王轩, 刘洁, 赖晓玲, 周国昌, 王倩琼. 一种适用于低压差分信号驱动电路的带隙基准源设计[J]. 微电子学与计算机, 2020, 37(2): 75-79. DOI：

WANG Xuan, LIU Jie, LAI Xiao-ling, et al. A novel design of band-gapreference for LVDS[J]. 2020, 37(2): 75-79. DOI：

摘要

针对低压差分信号驱动电路对共模电压和参考电流的需求，提出了一种新型带隙基准源结构，可在一个基准模块内同时提供带隙基准电压和基准电流.对传统带隙基准进行了改进，优化了基准电压和基准电流的温度特性.仿真结果显示，所设计的基准源电路具有较好的温度特性，在温度范围为-40℃~125℃时，基准电压的温漂系数为17.4 ppm/℃，电流基准的温漂系数为63.3 ppm/℃.作为参考电压与电流基准，可有效保证LVDS信号的稳定性.

Abstract

In order to provide both common mode voltage and current source to Low-Voltage Differential Signaling (LVDS) driver

a novel structure of band gap reference is proposed in this work to provide both voltage reference and current reference with a high performance of temperature characterizes. Bipolar transistors are used in proposed circuit to generate ideal temperature coefficients. The DC simulation shows the voltage temperature coefficient is 17.4 ppm/℃ and current temperature coefficient is 63.3ppm/℃. By using proposed band gap reference

the stability of LVDS can be significantly improved.

关键词

Keywords

references

BANBA H, SHIGA H, UMEZAWA A, et al. A CMOS band-gap reference circuit with sub-1-V operation[J]. IEEE Journal of Solid-State Circuits, 1999, 34(5): 670-674. DOI: 670

LEUNG KANANG, PHILIP K T, MOK. A Sub-1-V 15-ppm/C CMOS Band-gap Voltage Reference without Requiring Low Threshold Voltage Device[J]. Ieee Journal of solid-state circuits, 2002, 37(4): 4. DOI: 4

Telecommunications Industry Association. ANS I/TIA/EIA-644-A-2001. Electrical Characteristics of Low Voltage Differential Signaling (LVDS) Interface Circuits[S]. USA, TIA/EIA Engineering Standards and Publications, 2001.

Boston BEHZAD RAZAVI. Design of Analog CMOS and Integrated Circuit [M]. Boston:McGraw-Hill, 2000: 264-266. DOI: 264

LEI LIAO, LUKAS LOHAUS, AYTAC ATAC, et al. A Low Power Bandgap Voltage Reference Circuit with PSRR Enhancement[C]//8th Conference on Ph. D. Research in Microelectronics % Electronics Session, Germany, 2012: 785-789.

Microprocessor and Microcomputer Standards Subcommittee of the IEEE Computer Society. Draft 1. 3 IEEE. Draft Standard for Low Voltage Differential Signals (LVDS) for Scalable Coherent Interface (SCI)[S]. USA, IEEE standard department, 1995.

MALCOVATI P, MALOBERTI F, M. PRUZZI M, et al. Curvature Compensated BiCMOS Bandgap with 1-V Supply Voltage[J]. IEEE Journal of Solid-State Circuits, 2001, 36(7): 107-1081. DOI: 107

FITAS A, HORTA N, GUILHERME J. Design of a Radiation-Hardened Curvature Compensated Bandgap Reference Circuit[C]//2016 12th Conference on Ph. D. Research in Microelectronics and Electronics (PRIME), Portugal, 2016: 177-179.

LEE E K F. A low voltage CMOS bandgap reference without using an opamp[C]//2009 IEEE International Symposium Circuits and Systems, Taiwan, 2009: 2533-2536.

YANG Y T, ZHU Z M, LI Y I. High Precision High PSRR Bandgap Reference with Thermal Hysteresis Protection[J]. Journal of Semiconductors, 2010, 31(9): 113-117. DOI: 113

MARTíNEZ-NIETO A, SANZ-PASCUAL M T, P. ROSALES-QUINTERO P, et al. A bandgap voltage reference in 0. 18μm CMOS technology[C]// IEEE 56th International MWSCAS, Colombus, 2013: 289-293.

JIANG Y M, LEE E K F. Design of low-voltage band gap reference using transimpedance amplifier[J]. IEEE Trans, Circuits Syst II, 2000, 47(1): 552-555. DOI: 552

浏览量

下载量

CSCD

文章被引用时，请邮件提醒。

提交

工具集

关联资源

一种具有共模反馈的低抖动LVDS驱动器

超低功耗实时时钟电路的设计

一种用于极低压boost系统的高效率电荷泵

一种基于特征上下文理解与切片分析的肺结核检测算法

注意力机制与改进密集卷积引导的信息隐藏模型