基于数据访问计数的NAND闪存缓存管理算法

李中单; 严华

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基于数据访问计数的NAND闪存缓存管理算法

更新时间：2026-09-04

- 基于数据访问计数的NAND闪存缓存管理算法
- Cache management algorithm for NAND flash memory based on data access counting
- 微电子学与计算机 2020年37卷第5期页码：64-68
- 作者机构：
  
  1. 四川大学电子信息学院,四川,成都,610065
  2. 电子信息控制重点实验室,四川,成都,610036
- 作者简介：
- 基金信息：
  
  国家自然科学基金 61172181
- DOI：
  中图分类号：
- 纸质出版：2020
- 稿件说明：
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李中单, 严华. 基于数据访问计数的NAND闪存缓存管理算法[J]. 微电子学与计算机, 2020, 37(5): 64-68,74.

LI Zhong-dan, YAN Hua. Cache management algorithm for NAND flash memory based on data access counting[J]. 2020, 37(5): 64-68.
李中单, 严华. 基于数据访问计数的NAND闪存缓存管理算法[J]. 微电子学与计算机, 2020, 37(5): 64-68,74. DOI：

LI Zhong-dan, YAN Hua. Cache management algorithm for NAND flash memory based on data access counting[J]. 2020, 37(5): 64-68. DOI：

摘要

针对现有的NAND闪存缓存管理算法对缓冲区替换页选择和替换代价考虑不足，以及算法时间开销大的问题，提出基于数据访问计数的NAND闪存缓存管理算法.该算法首先考虑NAND闪存读写代价的不同以及数据访问频度的差异，对数据页进行冷干净、冷脏、热干净、热脏划分并分别采用LRU队列进行管理.然后，根据提出的数据访问计数策略计算数据页的访问计数值.最后，结合队列长度和数据页访问计数值给出了新的数据页替换策略.基于QEMU和Linux的仿真实验结果表明，与LRU、CF-LRU、LRU-WSR、CCF-LRU、LLRU等现有算法相比，所提算法能够有效降低写闪存次数，减少程序运行时间.

Abstract

In view of the problem that the existing NAND flash cache management algorithmconsidering insufficiently about the buffer replacement page selection and replacement cost and the algorithm time overhead is large

a NAND flash memory cache management algorithm based on data access counting is proposed.Considering the difference of read and write cost of NAND flash memory and the difference of data access frequency

the proposed algorithm divides data pages into cold clean

cold dirty

hot clean and hot dirty

and manages them by LRU queues.Then

according to the proposed data access count strategy

the access count value of the data page is calculated. Finally

based on queue length and data page access count

a new data page replacement strategy is proposed. The simulation results based on QEMU and Linux show that compared with LRU algorithm

CF-LRU algorithm

LRU-WSR algorithm

CCF-LRU algorithm and LLRU algorithm

the proposed algorithm can effectively reduce the number of writes and reduce the running time of the program.

关键词

Keywords

references

JUNG H, YOON K, SHIM H, et al. LIRS-WSR: Integration of LIRS and Writes Sequence Reordering for Flash Memory[J]. IEEE Transactions on Consumer Electronics, 2008, 54(3):1215-1223. DOI: 1215

YAN H, YAO Q. An efficient file-aware garbage collection algorithm for NAND flash-based consumer electronics[J]. IEEE Transactions on Consumer Electronics, 2014, 60(4):623-627. DOI: 623

PARK S Y, JUNG D, KANG J U, et al. CFLRU: a replacement algorithm for flash memory[C]// Cases 06: International Conference on Compilers. Shanghai, China, 2006.

何简繁.基于NAND闪存的固态硬盘缓存优化策略研究[D].杭州: 杭州电子科技大学, 2018

WEI Y, SHIN D. NAND flash storage device performance in Linux file system[C]// International Conference on Computer Sciences % Convergence Information Technology. Kuala Lumpur, Malaysia, IEEE, 2012.

CHIANG M L, LEE P C H, CHANG R C. Managing flash memory in personal communication devices[C]// IEEE International Symposium on Consumer Electronics. Singapore, 1997, DOI: 10.1109/ISCE.1997.658363.

JOHNSON T, SHASHA D, PROPOSED G W. Q: A Low Overhead High Performance Buffer Management Replacement Algorithm[C]// International Conference on Very Large Data Bases. Morgan Kaufmann

ZHI L, JIN P, XUAN S, et al. CCF-LRU: a new buffer replacement algorithm for flash memory[J]. IEEE Transactions on Consumer Electronics, 2009, 55(3):1351-1359. DOI: 1351

于万钧, 张海军, 刘全.一种基于NAND闪存高效的页面替换算法[J].现代电子技术, 2017(16):61-64. DOI: 61

李芳, 徐丽, 陈亮亮. LRU近似算法的研究[J].现代电子技术, 2009, 32(10):36-39. DOI: 36

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