一种具有工艺补偿的低功耗CMOS参考电流源

李阳军; 杨艳军; 陈鸣; 张成彬

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一种具有工艺补偿的低功耗CMOS参考电流源

更新时间：2026-09-04

- 一种具有工艺补偿的低功耗CMOS参考电流源
- A low power CMOS current reference with process-insensitive temperature compensation
- 微电子学与计算机 2021年38卷第2期页码：62-65
- 作者机构：
  
  1. 遵义师范学院机构物理与电子科学学院,贵州,遵义,563006
  2. 中国科学院机构微电子研究所,浙江,杭州,310053
- 作者简介：
- 基金信息：
  
  国家重点研发计划 2018YFB2002604贵州省教育厅青年科技人才成长项目黔教合KY字2018317号遵义市科技局、遵义师范学院联合科技研发资金项目遵师科合LH字201801号
- DOI：
  中图分类号：
- 纸质出版：2021
- 稿件说明：
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李阳军, 杨艳军, 陈鸣, 张成彬. 一种具有工艺补偿的低功耗CMOS参考电流源[J]. 微电子学与计算机, 2021, 38(2): 62-65.

LI Yang-jun, YANG Yan-jun, CHEN Ming, et al. A low power CMOS current reference with process-insensitive temperature compensation[J]. 2021, 38(2): 62-65.
李阳军, 杨艳军, 陈鸣, 张成彬. 一种具有工艺补偿的低功耗CMOS参考电流源[J]. 微电子学与计算机, 2021, 38(2): 62-65. DOI：

LI Yang-jun, YANG Yan-jun, CHEN Ming, et al. A low power CMOS current reference with process-insensitive temperature compensation[J]. 2021, 38(2): 62-65. DOI：

摘要

为了减小工艺对电流源温度系数的影响，本文提出了一种CTAT电压产生电路，能够产生温度系数对工艺不敏感的CTAT电压；结合温度系数对工艺不敏感的片上电阻，设计了一种具有工艺补偿的参考电流源.参考电流源电路基于0.18 m CMOS工艺设计，电源电压为1.8 V，版图面积为100 m*130 m.后仿真结果表明，tt工艺角下输出参考电流为32.5 nA，整个参考电流源电路消耗电流162 nA；在-40-125℃温度范围内，tt、ff和ss工艺角下的温度系数分别为39 ppm/℃、45 ppm/℃和35 ppm/℃.

Abstract

In order to reduce the influence of process on temperature coefficient of current reference

a CTAT voltage generation circuit is proposed in this paper

which can generate CTAT voltage with temperature coefficient insensitive to process. Combined with on-chip resistor which has process-independent temperature coefficient

a current reference with process compensation is designed. The proposed current reference is designed based on 0.18 m CMOS technology with the power supply of 1.8 V

and the layout area is 100 m*130 m. Post-simulation results show that the current reference consumes 162nA and the output current is 32.5 nA at tt corner. Within the temperature range of -40~125℃

the temperature coefficients at tt

ff and ss corner are 39 ppm/℃

45 ppm/℃ and 35 ppm/℃

respectively.

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references

GREGOIRE B R, MOON U K. Process-independent resistor temperature-coefficients using series/parallel and parallel/series composite resistors[C]//2007 IEEE International Symposium on Circuits and Systems. New Orleans: IEEE, 2007: 2826-2829. DOI: 10.1109/ISCAS.2007.378760.

FILANOVSKY I M, ALLAM A. Mutual compensation of mobility and threshold voltage temperature effects with applications in CMOS circuits[J]. IEEE Transactions on Circuits and Systems I: Fundamental Theory and Applications, 2001, 48(7): 876-884. DOI: 10.1109/81.933328.

BADILLO D A. 1.5V CMOS current reference with extended temperature operating range[C]//2002 IEEE International Symposium on Circuits and Systems. Proceedings (Cat. No. 02CH37353). Phoenix-Scottsdale: IEEE, 2002: Ⅲ. DOI: 10.1109/ISCAS.2002.1010194.

CHOUHAN S S, HALONEN K. A 0.67-?W 177-ppm/℃ All-MOS current reference circuit in a 0.18-?m CMOS technology[J]. IEEE Transactions on Circuits and Systems II: Express Briefs, 2016, 63(8): 723-727. DOI: 10.1109/TCSII.2016.2531158.

Oxford TSIVIDIS Y, MCANDREW C. Operation and modeling of the MOS transistor[M]. Oxford: Oxford University Press, 2011.

FIORI F, CROVETTI P S. A new compact temperature-compensated CMOS current reference[J]. IEEE Transactions on Circuits and Systems II: Express Briefs, 2005, 52(11): 724-728. DOI: 10.1109/TCSII.2005.852529.

BENDALI A, AUDET Y. A 1-V CMOS current reference with temperature and process compensation[J]. IEEE Transactions on Circuits and Systems I: Regular Papers, 2007, 54(7): 1424-1429. DOI: 10.1109/TCSI.2007.900176.

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