8~14 GHz SiGe BiCMOS宽带功率放大器

罗将; 何环环; 王锋; 周中杰; 童伟; 李健康; 苏国东

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8~14 GHz SiGe BiCMOS宽带功率放大器

更新时间：2026-09-04

- 8~14 GHz SiGe BiCMOS宽带功率放大器
- An 8~14 GHz wideband power amplifier in SiGe BiCMOS
- 微电子学与计算机 2021年38卷第2期页码：72-76
- 作者机构：
  
  1. 南京电子器件研究所机构,江苏,南京,210016
  2. 杭州电子科技大学机构射频电路与系统教育部重点实验室,浙江,杭州,310018
- 作者简介：
- 基金信息：
  
  毫米波国家重点实验室基金 K202019
- DOI：
  中图分类号：
- 纸质出版：2021
- 稿件说明：
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罗将, 何环环, 王锋, 周中杰, 童伟, 李健康, 苏国东. 8~14 GHz SiGe BiCMOS宽带功率放大器[J]. 微电子学与计算机, 2021, 38(2): 72-76.

LUO Jiang, HE Huan-huan, WANG Feng, et al. An 8~14 GHz wideband power amplifier in SiGe BiCMOS[J]. 2021, 38(2): 72-76.
罗将, 何环环, 王锋, 周中杰, 童伟, 李健康, 苏国东. 8~14 GHz SiGe BiCMOS宽带功率放大器[J]. 微电子学与计算机, 2021, 38(2): 72-76. DOI：

LUO Jiang, HE Huan-huan, WANG Feng, et al. An 8~14 GHz wideband power amplifier in SiGe BiCMOS[J]. 2021, 38(2): 72-76. DOI：

摘要

基于0.18 μm SiGe BiCMOS工艺，实现了一个8~14 GHz的宽带功率放大器芯片.通过采用增益分布技术有效地拓展了放大器的工作带宽而又不会显著恶化增益；利用基于变压器的功率合成技术，显著地提高了放大器的输出功率.测试结果表明，放大器获得了27 dB的峰值增益，6 GHz的3dB带宽，其中带宽比为54.5%.在3dB范围内，放大器获得了17.5~20.5 dBm的饱和输出功率，以及12~18%的附加效率.包含压焊盘在内的芯片约为1.0 mm.

Abstract

An 8-16 GHz wideband power amplifier was implemented based on the 0.18 μm SiGe BiCMOS process. By using the peak-gain distribution technique

the bandwidth of the amplifier is expanded effectively without significantly deteriorating the available gain. The high output power is achieved by combining the output power of two PA cells using a transformer. The measured results show that the amplifier features a peak gain of 27 dB

and a 3-dB bandwidth of 6 GHz with a bandwidth ratio 54.5%. At the 3-dB bandwidth frequency ranges

the amplifier achieves a saturation output power from 17.5~20.5 dBm

while the power added efficiency is 12-18%. The whole chip including all testing pads is 1.0 mm.

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references

LIU C, LI Q, LI Y H, et al. An 890 mW stacked power amplifier using SiGe HBTs for X-band multifunctional chips[C]//Proceedings of the ESSCIRC Conference 2015 - 41st European Solid-State Circuits Conference. Graz: IEEE, 2015: 68-71. DOI: 10.1109/ESSCIRC.2015.7313830.

CHANG M, REBEIZ G M. A 26 to 40GHz wideband SiGe balanced power amplifier IC[C]//Proceedings of 2007 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium. Honolulu: IEEE, 2007: 729-732. DOI: 10.1109/RFIC.2007.380986.

ZIHIR S, DINC T, GURBUZ Y. Compact X-band SiGe power amplifier for single-chip phased array radar applications[J]. IET Microwaves, Antennas % Propagation, 2012, 6(8): 956-961. DOI: 10.1049/iet-map.2012.0014.

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SEWIOLO B, WEIGEL R. A novel 2-12GHz 14dBm high efficiency power distributed amplifier for ultra-wideband-applications using a low-cost SiGe BiCMOS Technology[C]//Proceedings of 2008 IEEE MTT-S International Microwave Symposium Digest. Atlanta: IEEE, 2008: 1123-1126. DOI: 10.1109/MWSYM.2008.4633254.

VASYLYEV A V, WEGER P, BAKALSKI W, et al. 17-GHz 50-60 mW power amplifiers in 0.13-?m standard CMOS[J]. IEEE Microwave and Wireless Components Letters, 2006, 16(1): 37-39. DOI: 10.1109/LMWC.2005.861347.

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