Mechanics and Mechanically Tunable Band Gap in Single-Layer Hexagonal Boron-Nitride

Jiangtao Wu; Baolin Wang; Yujie Wei; Ronggui Yang; Mildred Dresselhaus

doi:10.1080/21663831.2013.824516

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Mechanics and Mechanically Tunable Band Gap in Single-Layer Hexagonal Boron-Nitride

Original Reports | 更新时间：2026-08-19

- Mechanics and Mechanically Tunable Band Gap in Single-Layer Hexagonal Boron-Nitride
- Mechanics and Mechanically Tunable Band Gap in Single-Layer Hexagonal Boron-Nitride
- 材料研究快报（英文） 2013年1卷第4期页码：200-206
- 作者机构：
  
  1. LNM Institute of Mechanics Chinese Academy of Sciences
  2. Department of Mechanical Engineering University of Colorado Boulder
  3. Departments of Physics and Department of Electrical Engineering and Computer Sciences Massachusetts Institute of Technology Cambridge
- 作者简介：
- 基金信息：
- DOI：10.1080/21663831.2013.824516
  中图分类号：
- 网络首发：2013-07-30，
  
  纸质出版：2013
- 稿件说明：
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Jiangtao Wu, Baolin Wang, Yujie Wei, 等. Mechanics and Mechanically Tunable Band Gap in Single-Layer Hexagonal Boron-Nitride[J]. 材料研究快报（英文）, 2013,1(4):200-206.

Jiangtao Wu, Baolin Wang, Yujie Wei, et al. Mechanics and Mechanically Tunable Band Gap in Single-Layer Hexagonal Boron-Nitride[J]. Materials Research Letters, 2013, 1(4): 200-206.
Jiangtao Wu, Baolin Wang, Yujie Wei, 等. Mechanics and Mechanically Tunable Band Gap in Single-Layer Hexagonal Boron-Nitride[J]. 材料研究快报（英文）, 2013,1(4):200-206. DOI： 10.1080/21663831.2013.824516.

Jiangtao Wu, Baolin Wang, Yujie Wei, et al. Mechanics and Mechanically Tunable Band Gap in Single-Layer Hexagonal Boron-Nitride[J]. Materials Research Letters, 2013, 1(4): 200-206. DOI： 10.1080/21663831.2013.824516.

摘要

Abstract

Current interest in two-dimensional materials extends from graphene to others systems such as single-layer hexagonal boron-nitride (h-BN)

for the possibility of making heterogeneous structures. Here

we report mechanical properties of h-BN and its band structures tuned by straining by using the density functional theory calculations. Young's modulus and bending rigidity for h-BN are isotropic; its failure strength and failure strain show strong anisotropy. A small fraction of antisite defects in h-BN can largely decrease its mechanical properties. We reveal that strain can tune single-layer h-BN from an insulator to a semiconductor.

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相关机构

a Multidisciplinary Research Center – Cardinal Stefan Wyszynski University in Warsaw

a Multidisciplinary Research Center – Cardinal Stefan Wyszynski University in Warsaw Warsaw Poland

b Institute of High Pressure Physics Polish Academy of Sciences

c PSL Research University Chimie ParisTech CNRS Institut de Recherche de Chimie Paris

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