Enhanced Electrical Activation in In-Implanted Si0.35Ge0.65 by C Co-Doping

Ruixing Feng; Felipe Kremer; David J. Sprouster; Sahar Mirzaei; Stefan Decoster; Chris J. Glover; Scott A. Medling; John Lundsgaard Hansen; Arne Nylandsted-Larsen; Salvy P. Russo; Mark C. Ridgway

doi:10.1080/21663831.2016.1169229

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Enhanced Electrical Activation in In-Implanted Si0.35Ge0.65 by C Co-Doping

Original Report | 更新时间：2026-08-19

- Enhanced Electrical Activation in In-Implanted Si0.35Ge0.65 by C Co-Doping
- Enhanced Electrical Activation in In-Implanted Si0.35Ge0.65 by C Co-Doping
- 材料研究快报（英文） 2017年5卷第1期页码：29-34
- 作者机构：
  
  1. Department of Electronic Materials Engineering Australian National University
  2. Nuclear Science and Technology Department Brookhaven National Laboratory Upton
  3. KU Leuven Instituut voor Kern-en Stralingsfysica
  4. Australian Synchrotron Blackburn Road Clayton,800
  5. Department of Physics and Astronomy Aarhus University
  6. Department of Applied Physics School of Applied Sciences RMIT University
- 作者简介：
- 基金信息：
- DOI：10.1080/21663831.2016.1169229
  中图分类号：
- 网络首发：2016-04-21，
  
  纸质出版：2017
- 稿件说明：
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Ruixing Feng, Felipe Kremer, David J. Sprouster, 等. Enhanced Electrical Activation in In-Implanted Si0.35Ge0.65 by C Co-Doping[J]. 材料研究快报（英文）, 2017,5(1):29-34.

Ruixing Feng, Felipe Kremer, David J. Sprouster, et al. Enhanced Electrical Activation in In-Implanted Si0.35Ge0.65 by C Co-Doping[J]. Materials Research Letters, 2017, 5(1): 29-34.
Ruixing Feng, Felipe Kremer, David J. Sprouster, 等. Enhanced Electrical Activation in In-Implanted Si0.35Ge0.65 by C Co-Doping[J]. 材料研究快报（英文）, 2017,5(1):29-34. DOI： 10.1080/21663831.2016.1169229.

Ruixing Feng, Felipe Kremer, David J. Sprouster, et al. Enhanced Electrical Activation in In-Implanted Si0.35Ge0.65 by C Co-Doping[J]. Materials Research Letters, 2017, 5(1): 29-34. DOI： 10.1080/21663831.2016.1169229.

摘要

Abstract

BSTRACTIn this report

we have achieved a significant increase in the electrically active dopant fraction in Indium (In)-implanted Si

0.35

0.65

by co-doping with the isovalent element Carbon (C). Electrical measurements have been correlated with X-ray absorption spectroscopy to determine the electrical properties and the In atom lattice location. With C + In co-doping

the solid solubility of In in Si

0.35

0.65

was at least tripled from between 0.02 and 0.06 at% to between 0.2 and 0.6 at% as a result of C–In pair formation

which suppressed In metal precipitation. A dramatic improvement of electrical properties was thus attained in the co-doped samples.

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