Imaging the in-plane distribution of helium precipitates at a Cu/V interface

Di Chen; Nan Li; Dina Yuryev; Juan Wen; Kevin Baldwin; Michael J. Demkowicz; Yongqiang Wang

doi:10.1080/21663831.2017.1287132

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Imaging the in-plane distribution of helium precipitates at a Cu/V interface

Original Report | 更新时间：2026-08-19

- Imaging the in-plane distribution of helium precipitates at a Cu/V interface
- Imaging the in-plane distribution of helium precipitates at a Cu/V interface
- 材料研究快报（英文） 2017年5卷第5期页码：335-342
- 作者机构：
  
  1. Materials Science and Technology Division Los Alamos National Laboratory Los Alamos
  2. Center for Integrated Nanotechnologies Materials Phycicsand Applications Division Los Alamos National Laboratory Los Alamos
  3. Department of Materials Science and Engineering Massachusetts Institute of Technology Cambridge
  4. Department of Materials Science and Engineering Texas A&M University College Station
- 作者简介：
- 基金信息：
- DOI：10.1080/21663831.2017.1287132
  中图分类号：
- 网络首发：2017-02-15，
  
  纸质出版：2017
- 稿件说明：
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Di Chen, Nan Li, Dina Yuryev, 等. Imaging the in-plane distribution of helium precipitates at a Cu/V interface[J]. 材料研究快报（英文）, 2017,5(5):335-342.

Di Chen, Nan Li, Dina Yuryev, et al. Imaging the in-plane distribution of helium precipitates at a Cu/V interface[J]. Materials Research Letters, 2017, 5(5): 335-342.
Di Chen, Nan Li, Dina Yuryev, 等. Imaging the in-plane distribution of helium precipitates at a Cu/V interface[J]. 材料研究快报（英文）, 2017,5(5):335-342. DOI： 10.1080/21663831.2017.1287132.

Di Chen, Nan Li, Dina Yuryev, et al. Imaging the in-plane distribution of helium precipitates at a Cu/V interface[J]. Materials Research Letters, 2017, 5(5): 335-342. DOI： 10.1080/21663831.2017.1287132.

摘要

Abstract

BSTRACTWe describe a transmission electron microscopy investigation of the distribution of helium precipitates within the plane of an interface between Cu and V. Statistical analysis of precipitate locations reveals a weak tendency for interfacial precipitates to align along ⟨110⟩-type crystallographic directions within the Cu layer. Comparison of these findings with helium-free Cu/V interfaces suggests that the precipitates may be aggregating preferentially along atomic-size steps in the interface created by threading dislocations in the Cu layer. Our observations also suggest that some precipitates may be aggregating along intersections between interfacial misfit dislocations.

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相关机构

d Department of Materials Science and Engineering City University of Hong Kong

c Ansteel Beijing Research Institute Co. Ltd.

b School of Materials Science and Engineering Jiangsu University

a Nano and Heterogeneous Materials Center School of Materials Science and Engineering Nanjing University of Science and Technology

a Department of Physics University at Buffalo – the State University of New York Buffalo

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