Donor-doped ZnO thin films on mica for fully-inorganic flexible thermoelectrics

Biplab Paul; Volodymyr Khranovskyy; Rositsa Yakimova; Per Eklund

doi:10.1080/21663831.2019.1594427

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Donor-doped ZnO thin films on mica for fully-inorganic flexible thermoelectrics

Original Report | 更新时间：2026-08-19

- Donor-doped ZnO thin films on mica for fully-inorganic flexible thermoelectrics
- Donor-doped ZnO thin films on mica for fully-inorganic flexible thermoelectrics
- 材料研究快报（英文） 2019年7卷第6期页码：239-243
- 作者机构：
  
  1. Thin Film Physics Division Department of Physics Chemistry and Biology (IFM)
  2. Semiconductor Materials Division Department of Physics Chemistry and Biology (IFM)
- 作者简介：
- 基金信息：
- DOI：10.1080/21663831.2019.1594427
  中图分类号：
- 网络首发：2019-03-24，
  
  纸质出版：2019
- 稿件说明：
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Biplab Paul, Volodymyr Khranovskyy, Rositsa Yakimova, 等. Donor-doped ZnO thin films on mica for fully-inorganic flexible thermoelectrics[J]. 材料研究快报（英文）, 2019,7(6):239-243.

Biplab Paul, Volodymyr Khranovskyy, Rositsa Yakimova, et al. Donor-doped ZnO thin films on mica for fully-inorganic flexible thermoelectrics[J]. Materials Research Letters, 2019, 7(6): 239-243.
Biplab Paul, Volodymyr Khranovskyy, Rositsa Yakimova, 等. Donor-doped ZnO thin films on mica for fully-inorganic flexible thermoelectrics[J]. 材料研究快报（英文）, 2019,7(6):239-243. DOI： 10.1080/21663831.2019.1594427.

Biplab Paul, Volodymyr Khranovskyy, Rositsa Yakimova, et al. Donor-doped ZnO thin films on mica for fully-inorganic flexible thermoelectrics[J]. Materials Research Letters, 2019, 7(6): 239-243. DOI： 10.1080/21663831.2019.1594427.

摘要

Abstract

BSTRACTThe development of fully-inorganic thin flexible materials is important for flexible thermoelectric applications in a wide temperature range

such as harvesting power from hot curved surfaces (e.g. hot pipes). Here

we investigate the thermoelectric properties of a series of ZnO:Ga

Al thin films with varying dopant concentration deposited on flexible mica substrate by atmospheric pressure metalorganic chemical vapor deposition. The films are bendable

while sustaining the high power factor

above 1 × 10

−4

−1

−2

for singly doped Zn

0.99

0.01

O film in a wide temperature range

from room temperature to 400°C.

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相关机构

a Key Laboratory of Ocean Energy Utilization and Energy Conservation of Ministry of Education Dalian University of Technology

a Key Laboratory of Ocean Energy Utilization and Energy Conservation of Ministry of Education Dalian University of Technology Dalian People’s Republic of China

b BYD Automotive Company Limited

Department of Materials Science and Engineering The Pennsylvania State University University Park

a Department of Materials Science and Engineering Technion – Israel Institute of Technology

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