R. Oliva, T. Woźniak, F. Dybala, 等. Hidden spin-polarized bands in semiconducting 2H-MoTe2[J]. 材料研究快报(英文), 2020,8(2):75-81.
R. Oliva, T. Woźniak, F. Dybala, et al. Hidden spin-polarized bands in semiconducting 2H-MoTe2[J]. Materials Research Letters, 2020, 8(2): 75-81.
R. Oliva, T. Woźniak, F. Dybala, 等. Hidden spin-polarized bands in semiconducting 2H-MoTe2[J]. 材料研究快报(英文), 2020,8(2):75-81.DOI: 10.1080/21663831.2019.1702113.
R. Oliva, T. Woźniak, F. Dybala, et al. Hidden spin-polarized bands in semiconducting 2H-MoTe2[J]. Materials Research Letters, 2020, 8(2): 75-81.DOI: 10.1080/21663831.2019.1702113.
Hidden spin-polarized bands in semiconducting 2H-MoTe2
BSTRACTWe present experimental and theoretical studies of the electronic band structure of 2H-MoTe
2
at high hydrostatic pressures. Photoreflectance measurements allowed the determination of the pressure coefficient of the direct transitions A and B
which are 2.40(3) and −3.42(18) meV/kbar
respectively. We attribute the sign difference to a strong splitting of the conduction bands with increasing pressure and the presence of hidden spin-polarized states in bulk MoTe
2
. These results provide direct experimental evidence that the spin–valley locking effect takes place in centrosymmetric transition metal dichalcogenides.
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相关作者
Xu-Sheng Yang
Di Wang
K.C. Chan
Xuan Huang
Xu Hou
Jiacheng Zhang
Wenqing Yang
Zhenguang Gao
相关机构
b Hong Kong Polytechnic University Shenzhen Research Institute
a Research Institute for Advanced Manufacturing Department of Industrial and Systems Engineering The Hong Kong Polytechnic University Kowloon Hong Kong People's Republic of China
c School of Mechanical and Automotive Engineering South China University of Technology
a Research Institute for Advanced Manufacturing Department of Industrial and Systems Engineering The Hong Kong Polytechnic University Kowloon
c Department of Mechanical Engineering City University of Hong Kong Hong Kong People’s Republic of China