Pulsed laser deposition of epitaxial Cr2AlC MAX phase thin films on MgO(111) and Al2O3(0001)

Marc Stevens; Hanna Pazniak; Alexander Jemiola; Merve Felek; Michael Farle; Ulf Wiedwald

doi:10.1080/21663831.2021.1920510

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Pulsed laser deposition of epitaxial Cr2AlC MAX phase thin films on MgO(111) and Al2O3(0001)

Original Report | 更新时间：2026-08-19

- Pulsed laser deposition of epitaxial Cr2AlC MAX phase thin films on MgO(111) and Al2O3(0001)
- Pulsed laser deposition of epitaxial Cr2AlC MAX phase thin films on MgO(111) and Al2O3(0001)
- 材料研究快报（英文） 2021年9卷第8期页码：343-349
- 作者机构：
  
  1. a Faculty of Physics and Center for Nanointegration Duisburg-Essen (CENIDE) University of Duisburg-Essen
  2. a Faculty of Physics and Center for Nanointegration Duisburg-Essen (CENIDE) University of Duisburg-Essen Duisburg Germany,47057
  3. b Kirensky Institute of Physics Federal Research Center KSC SB RAS Krasnoyarsk
- 作者简介：
- 基金信息：
- DOI：10.1080/21663831.2021.1920510
  中图分类号：
- 网络首发：2021-05-04，
  
  纸质出版：2021
- 稿件说明：
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Marc Stevens, Hanna Pazniak, Alexander Jemiola, 等. Pulsed laser deposition of epitaxial Cr2AlC MAX phase thin films on MgO(111) and Al2O3(0001)[J]. 材料研究快报（英文）, 2021,9(8):343-349.

Marc Stevens, Hanna Pazniak, Alexander Jemiola, et al. Pulsed laser deposition of epitaxial Cr2AlC MAX phase thin films on MgO(111) and Al2O3(0001)[J]. Materials Research Letters, 2021, 9(8): 343-349.
Marc Stevens, Hanna Pazniak, Alexander Jemiola, 等. Pulsed laser deposition of epitaxial Cr2AlC MAX phase thin films on MgO(111) and Al2O3(0001)[J]. 材料研究快报（英文）, 2021,9(8):343-349. DOI： 10.1080/21663831.2021.1920510.

Marc Stevens, Hanna Pazniak, Alexander Jemiola, et al. Pulsed laser deposition of epitaxial Cr2AlC MAX phase thin films on MgO(111) and Al2O3(0001)[J]. Materials Research Letters, 2021, 9(8): 343-349. DOI： 10.1080/21663831.2021.1920510.

摘要

Abstract

Epitaxial Cr

AlC MAX phase thin films were grown on MgO(111) and Al

(0001) by pulsed laser deposition (PLD) at 600°C. X-ray diffraction and morphology studies of Cr

AlC thin films on MgO (111) reveal phase purity

columnar growth

the epitaxial relation Cr

AlC(0001) || MgO(111) and Cr

AlC [11-20

]

|| MgO[10-1

]

and similar growth behaviour on Al

(0001). Resistivity measurements show semiconductor-like behaviour for 10 and 20 nm thick films

and metallic-like behaviour for thicker films

suggesting a percolation thickness slightly above 20 nm. Our results demonstrate the potential of PLD as a novel method for the growth of epitaxial MAX phase thin films.

关键词

Keywords

references

Lange C. Construction of a pulsed laser deposition (PLD) system and investigations on PLD in the MAX phase systems Ti-Si-C, Cr-Al-C and Ti-Al-N [dissertation]. Göttingen: Georg-August-University at Göttingen; 2009. German. (Open in a new window)Google Scholar

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