n-Type thermoelectric metal chalcogenide (Ag,Pb,Bi)(S,Se,Te) designed by multi-site-type high-entropy alloying

Aichi Yamashita; Yosuke Goto; Akira Miura; Chikako Moriyoshi; Yoshihiro Kuroiwa; Yoshikazu Mizuguchi

doi:10.1080/21663831.2021.1929533

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n-Type thermoelectric metal chalcogenide (Ag,Pb,Bi)(S,Se,Te) designed by multi-site-type high-entropy alloying

Original Report | 更新时间：2026-08-19

- n-Type thermoelectric metal chalcogenide (Ag,Pb,Bi)(S,Se,Te) designed by multi-site-type high-entropy alloying
- n-Type thermoelectric metal chalcogenide (Ag,Pb,Bi)(S,Se,Te) designed by multi-site-type high-entropy alloying
- 材料研究快报（英文） 2021年9卷第9期页码：366-372
- 作者机构：
  
  1. a Department of Physics Tokyo Metropolitan University
  2. b Faculty of Engineering Hokkaido University
  3. c Graduate School of Advanced Science and Engineering Hiroshima University
- 作者简介：
- 基金信息：
- DOI：10.1080/21663831.2021.1929533
  中图分类号：
- 网络首发：2021-05-21，
  
  纸质出版：2021
- 稿件说明：
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Aichi Yamashita, Yosuke Goto, Akira Miura, 等. n-Type thermoelectric metal chalcogenide (Ag,Pb,Bi)(S,Se,Te) designed by multi-site-type high-entropy alloying[J]. 材料研究快报（英文）, 2021,9(9):366-372.

Aichi Yamashita, Yosuke Goto, Akira Miura, et al. n-Type thermoelectric metal chalcogenide (Ag,Pb,Bi)(S,Se,Te) designed by multi-site-type high-entropy alloying[J]. Materials Research Letters, 2021, 9(9): 366-372.
Aichi Yamashita, Yosuke Goto, Akira Miura, 等. n-Type thermoelectric metal chalcogenide (Ag,Pb,Bi)(S,Se,Te) designed by multi-site-type high-entropy alloying[J]. 材料研究快报（英文）, 2021,9(9):366-372. DOI： 10.1080/21663831.2021.1929533.

Aichi Yamashita, Yosuke Goto, Akira Miura, et al. n-Type thermoelectric metal chalcogenide (Ag,Pb,Bi)(S,Se,Te) designed by multi-site-type high-entropy alloying[J]. Materials Research Letters, 2021, 9(9): 366-372. DOI： 10.1080/21663831.2021.1929533.

摘要

Abstract

metal chalcogenide (Ag

Bi)(S

Te) with an NaCl-type structure was designed by multi-site-type high-entropy alloying (MST-HEA)

and the thermoelectric properties were investigated. In this material

both cation and anion sites were alloyed and thus its total entropy of mixing Δ

mix

(total) achieved 2.00

(

: gas constant). It was found that present sample is an n-type semiconductor with ultra-low lattice thermal conductivity (

) of 0.62 Wm

−1

at room temperature and 0.46 Wm

−1

= 723 K. Very low

and good power factor resulted in figure of merit of 0.54 at

= 723 K.

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