Significant pressure-induced enhancement of photoelectric properties of WS2 in the near-infrared region

Xueting Zhang; Qing Dong; Zonglun Li; Xiaoling Jing; Ran Liu; Bo Liu; Tingting Zhao; Tao Lin; Quanjun Li; Bingbing Liu

doi:10.1080/21663831.2022.2065893

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Significant pressure-induced enhancement of photoelectric properties of WS2 in the near-infrared region

Original Reports | 更新时间：2026-08-19

- Significant pressure-induced enhancement of photoelectric properties of WS2 in the near-infrared region
- Significant pressure-induced enhancement of photoelectric properties of WS2 in the near-infrared region
- 材料研究快报（英文） 2022年10卷第8期页码：547-555
- 作者机构：
  
  1. a State Key Laboratory of Superhard Materials Jilin University
  2. a State Key Laboratory of Superhard Materials Jilin University Changchun People’s Republic of China
  3. b Department of Physics Institute for High Pressure Hanyang University
- 作者简介：
- 基金信息：
- DOI：10.1080/21663831.2022.2065893
  中图分类号：
- 网络首发：2022-04-22，
  
  纸质出版：2022
- 稿件说明：
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Xueting Zhang, Qing Dong, Zonglun Li, 等. Significant pressure-induced enhancement of photoelectric properties of WS2 in the near-infrared region[J]. 材料研究快报（英文）, 2022,10(8):547-555.

Xueting Zhang, Qing Dong, Zonglun Li, et al. Significant pressure-induced enhancement of photoelectric properties of WS2 in the near-infrared region[J]. Materials Research Letters, 2022, 10(8): 547-555.
Xueting Zhang, Qing Dong, Zonglun Li, 等. Significant pressure-induced enhancement of photoelectric properties of WS2 in the near-infrared region[J]. 材料研究快报（英文）, 2022,10(8):547-555. DOI： 10.1080/21663831.2022.2065893.

Xueting Zhang, Qing Dong, Zonglun Li, et al. Significant pressure-induced enhancement of photoelectric properties of WS2 in the near-infrared region[J]. Materials Research Letters, 2022, 10(8): 547-555. DOI： 10.1080/21663831.2022.2065893.

摘要

Abstract

Here

a WS

-based photodetector is fabricated and its detection range is extended to optical communication waveband by pressure. At ambient pressure

exhibits a fast photoelectric response speed (rising/decaying time: 35/49 μs) under 635 nm laser illumination. Upon compression

the responsiveness and external quantum efficiency increase by two orders of magnitude under NIR illumination with different wavelengths as the pressure increases up to 17.2 GPa. The pressure-induced band gap reduction is mainly ascribed to the enhanced S-S interlayer interaction

leading to significant enhancement in the WS

photoresponsiveness. This study paves the way for designing high-performance broadband photodetectors through pressure modification.

IMPACT STATEMENT

Fast photoelectric response speed and extended detection range were achieved in the WS

-based photodetector via pressure modulation

which paves a new way for designing high-performance broadband photodetectors.

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相关机构

d State Key Laboratory of Supermolecular Structure and Materials College of Chemistry Jilin University

c Key Laboratory of Organosilicon Chemistry and Material Technology Ministry of Education College of Material Chemistry and Chemical Engineering Hangzhou Normal University

b School of Basic Education Beijing Institute of Graphic Communication

a State Key Laboratory of Superhard Materials College of Physics Jilin University

School of Physics Science and Information Technology Shandong Key Laboratory of Optical Communication Science and Technology Liaocheng University

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