Pressure-induced enhancement and retainability of optoelectronic properties of NiPS3

Sixue Fang; Quanjun Li; Zonglun Li; Qing Dong; Xiaoling Jing; Chenyi Li; Haiyan Li; Bo Liu; Ran Liu; Bingbing Liu

doi:10.1080/21663831.2022.2130717

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Pressure-induced enhancement and retainability of optoelectronic properties of NiPS3

Original Reports | 更新时间：2026-08-19

- Pressure-induced enhancement and retainability of optoelectronic properties of NiPS3
- Pressure-induced enhancement and retainability of optoelectronic properties of NiPS3
- 材料研究快报（英文） 2023年11卷第2期页码：134-142
- 作者机构：
  
  State Key Laboratory of Superhard Materials Jilin University
- 作者简介：
- 基金信息：
- DOI：10.1080/21663831.2022.2130717
  中图分类号：
- 网络首发：2022-10-05，
  
  纸质出版：2023
- 稿件说明：
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Sixue Fang, Quanjun Li, Zonglun Li, 等. Pressure-induced enhancement and retainability of optoelectronic properties of NiPS3[J]. 材料研究快报（英文）, 2023,11(2):134-142.

Sixue Fang, Quanjun Li, Zonglun Li, et al. Pressure-induced enhancement and retainability of optoelectronic properties of NiPS3[J]. Materials Research Letters, 2023, 11(2): 134-142.
Sixue Fang, Quanjun Li, Zonglun Li, 等. Pressure-induced enhancement and retainability of optoelectronic properties of NiPS3[J]. 材料研究快报（英文）, 2023,11(2):134-142. DOI： 10.1080/21663831.2022.2130717.

Sixue Fang, Quanjun Li, Zonglun Li, et al. Pressure-induced enhancement and retainability of optoelectronic properties of NiPS3[J]. Materials Research Letters, 2023, 11(2): 134-142. DOI： 10.1080/21663831.2022.2130717.

摘要

Abstract

Here

we report significant pressure-modulate optoelectronic properties of NiPS

. Upon compression

NiPS

exhibited a photocurrent increase of five orders of magnitude over the initial value. Interestingly

when NiPS

was finally decompressed to ambient conditions

the photocurrent could maintain a two-order-of-magnitude enhancement. In addition

the spectral response range was extended to the near-infrared spectral range (up to 1650 nm) under high pressure. Raman and XRD measurements and theoretical calculations revealed significant enhancement in both interlayer and intralayer interactions during compression

leading to a remarkable modulation of the optoelectronic properties.

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相关机构

State Key Laboratory of Superhard Materials College of Physics Jilin University

d State Key Laboratory of Supermolecular Structure and Materials College of Chemistry Jilin University

c Key Laboratory of Organosilicon Chemistry and Material Technology Ministry of Education College of Material Chemistry and Chemical Engineering Hangzhou Normal University

b School of Basic Education Beijing Institute of Graphic Communication

a State Key Laboratory of Superhard Materials College of Physics Jilin University

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