Thermal conductivity enhancement of aluminum scandium nitride grown by molecular beam epitaxy

Gustavo A. Alvarez; Joseph Casamento; Len van Deurzen; Md Irfan Khan; Kamruzzaman Khan; Eugene Jeong; Elaheh Ahmadi; Huili Grace Xing; Debdeep Jena; Zhiting Tian

doi:10.1080/21663831.2023.2279667

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Thermal conductivity enhancement of aluminum scandium nitride grown by molecular beam epitaxy

Original Reports | 更新时间：2026-08-19

- Thermal conductivity enhancement of aluminum scandium nitride grown by molecular beam epitaxy
- Thermal conductivity enhancement of aluminum scandium nitride grown by molecular beam epitaxy
- 材料研究快报（英文） 2023年11卷第12期页码：1048-1054
- 作者机构：
  
  1. a Sibley School of Mechanical and Aerospace Engineering Cornell University Ithaca
  2. b Department of Materials Science and Engineering Cornell University Ithaca
  3. c School of Applied and Engineering Physics Cornell University Ithaca
  4. d Department of Electrical Engineering and Computer Science University of Michigan Ann Arbor
  5. e Department of Electrical & Computer Engineering University of California Santa Barbara
  6. d Department of Electrical Engineering and Computer Science University of Michigan Ann Arbor Michigan USA
  7. f Department of Electrical & Computer Engineering University of California Los Angeles
  8. b Department of Materials Science and Engineering Cornell University Ithaca NY USA
  9. c School of Applied and Engineering Physics Cornell University Ithaca NY USA
  10. g School of Electrical and Computer Engineering Cornell University Ithaca
- 作者简介：
- 基金信息：
- DOI：10.1080/21663831.2023.2279667
  中图分类号：
- 网络首发：2023-11-14，
  
  纸质出版：2023
- 稿件说明：
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Gustavo A. Alvarez, Joseph Casamento, Len van Deurzen, 等. Thermal conductivity enhancement of aluminum scandium nitride grown by molecular beam epitaxy[J]. 材料研究快报（英文）, 2023,11(12):1048-1054.

Gustavo A. Alvarez, Joseph Casamento, Len van Deurzen, et al. Thermal conductivity enhancement of aluminum scandium nitride grown by molecular beam epitaxy[J]. Materials Research Letters, 2023, 11(12): 1048-1054.
Gustavo A. Alvarez, Joseph Casamento, Len van Deurzen, 等. Thermal conductivity enhancement of aluminum scandium nitride grown by molecular beam epitaxy[J]. 材料研究快报（英文）, 2023,11(12):1048-1054. DOI： 10.1080/21663831.2023.2279667.

Gustavo A. Alvarez, Joseph Casamento, Len van Deurzen, et al. Thermal conductivity enhancement of aluminum scandium nitride grown by molecular beam epitaxy[J]. Materials Research Letters, 2023, 11(12): 1048-1054. DOI： 10.1080/21663831.2023.2279667.

摘要

luminum scandium nitride (AlScN) has been receiving increasing interest for radio frequency microelectromechanical systems because of their higher achievable bandwidths owing to the larger piezoelectric response of AlScN compared to AlN. However

alloying scandium (Sc) with aluminum nitride (AlN) significantly lowe

rs the thermal conductivity of AlScN due to phonon alloy scattering. Self-heating in AlScN devices potentially limits power handling

constrains the maximum transmission rate

and ultimately leads to thermal failure. We grew plasma-assisted molecular beam epitaxy (PAMBE) AlScN on AlN-Al

and GaN-Al

substrates

and compared the cross-plane thermal conductivity to current work on AlScN grown on Si substrates.

Abstract

alloying scandium (Sc) with aluminum nitride (AlN) significantly lowers the thermal conductivity of AlScN due to phonon alloy scattering. Self-heating in AlScN devices potentially limits power handling

constrains the maximum transmission rate

and ultimately leads to thermal failure. We grew plasma-assisted molecular beam epitaxy (PAMBE) AlScN on AlN-Al

and GaN-Al

substrates

and compared the cross-plane thermal conductivity to current work on AlScN grown on Si substrates.

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