HJ1.1mm] Aiming to enable high power impulse magnetron sputtering (HiPIMS) technology to achieve high-speed deposition process while maintaining high ionization rate

the electric and magnetic fields synergistic effect was applied to improve the HiPIMS discharge and deposition characteristics. The substrate ion current density

optical emission spectrum

surface morphology and surface roughness

cross-section morphology

and deposition rate of vanadium films prepared by electro-magnetic fields synergistically enhancing HiPIMS ((E-MF) HiPIMS) were investigated

and the intrinsic physical mechanism of (E-MF) HiPIMS was analyzed. Results show that compared with HiPIMS

the peak of substrate ion current density of the plate workpiece in the discharge of vanadium target (E-MF) HiPIMS increased seven times

and the peak of substrate ion current density of the cylinder-like workpiece in the discharge of copper target (E-MF) HiPIMS increased 14 times. The intensity of Ar0 spectral lines

Ar+ spectral lines

V0 spectral lines

and V+ spectral lines of (E-MF) HiPIMS all enhanced significantly

and the ionization rate of Ar and V particles increased. The vanadium films prepared by (E-MF) HiPIMS consists of V (111) and V (211). The surface of the vanadium films prepared by (E-MF) HiPIMS was much smoother

and the surface roughness was reduced from 15.0 nm to 9.6 nm. The growing structure of the vanadium films was much denser

and the deposition rate was increased by about 30%. The deposition rate of copper films prepared by (E-MF) HiPIMS increased by about 50% under the cylinder-like workpiece rotation conditions. (E-MF) HiPIMS is a novel discharge mode with high ionization rate and high deposition rate

which can effectively avoid the technical defect of low deposition rate of conventional HiPIMS.