To mitigate the cost of additional area and peripheral circuit

which is caused by conventional dimension adjusting way in the subthreshold region

the reverse short-channel and the reverse narrow-channel effect are applied to improve the conventional way. Hence

the additional cost of area and peripheral circuit is reduced

and noise margin of the Static Random Access Memory is also enhanced. In addition

the reading and writing performance is simultaneously optimized. A 10-T Static Random Access Memory cell is fabricated in 130 nm process

and test results show that the effects implemented in the cell can save about 76% of area consumption

and facilitate 30.5% enhancement in the noise margin compared with the conventional way. Consequently

the SRAM can function steadily under the voltage of 0.32 V.