To solve the problem of ferroelectric thin film polarization fatigue，the fatigue mechanisms and influ-ential factors on ferroelectric thin films are reviewed in detail． There are many influencing factors on ferroelectric thinfilm fatigue，which can be divided into intrinsic factor and the external factor． The external factor mainly consists of the element to dope，the electrode，the boundary layer optimization，the temperature and the atmosphere． This article is focused on external factor influence，and the corresponding measures to improve film fatigue performance are pro-posed，among which the most effective measure is the boundary layer optimization between the metal electrode and the thin film with the thin film lattice parameter close to transitional layer． This article enhances the boundary layer opti-mization method． Finally combining with the work itself，we point out that establishing the relationship among the de-sign of interface layer，microstructure evolution and the fatigue performance is our key problems in the future．