Abstract:A series of Zn:Ce:Cu:LiNbO3crystals doped with Zn2+(1

3

5

7 mol%) were grown by the Czochralski method from the congruent melt Inorder to study the influence of Zn2 +ion concentration to the defect structureof Zn: Ce: Cu: LiNbO3 single crystal

we choose lightinduced scatteringexperiment to measure the optical damage resistance ability of theZn:Ce:Cu:LiNbO3crystal The effective segregation coefficient of doped ions ofZn:Ce:Cu:LiNbO3crystals were measured by inductively coupled plasmaatomicemission spectrum(ICPAES) It was found that the optical damage resistanceability enhanced with increasing of ZnO concentration in the melt and effectivesegregation coefficient of Zn2+will increased with increasing of ZnOconcentration in the melt at first

which reach to the climax when the doped Zn2+concentrationis 5mol%

then it decreased The effective segregation coefficient of Ce3+and Cu2+willdecreased with increasing of ZnO concentration in the melt The experimentalwere analyzed based on the Livacancy defect model