硅基氮化镓微机械谐振器研究

郭兴龙; 张玲玲; 王九山

doi:10.19304/J.ISSN1000-7180.2021.0724

Chinese

您当前的位置：

首页 >

文章列表页 >

硅基氮化镓微机械谐振器研究

微电子器件与工艺 | 更新时间：2026-09-04

- 硅基氮化镓微机械谐振器研究
- Research on the gallium nitride micromechanical resonators based on silicon
- 微电子学与计算机 2022年39卷第3期页码：101-105
- 作者机构：
  
  南通大学机构信息科学技术学院,江苏,南通,226019
- 作者简介：
- 基金信息：
  
  国家自然科学基金 62074086
- DOI：10.19304/J.ISSN1000-7180.2021.0724
  中图分类号：
- 纸质出版：2022
- 稿件说明：
移动端阅览
郭兴龙, 张玲玲, 王九山. 硅基氮化镓微机械谐振器研究[J]. 微电子学与计算机, 2022, 39(3): 101-105.

GUO Xinglong, ZHANG Lingling, WANG Jiushan. Research on the gallium nitride micromechanical resonators based on silicon[J]. 2022, 39(3): 101-105.
郭兴龙, 张玲玲, 王九山. 硅基氮化镓微机械谐振器研究[J]. 微电子学与计算机, 2022, 39(3): 101-105. DOI： 10.19304/J.ISSN1000-7180.2021.0724.

GUO Xinglong, ZHANG Lingling, WANG Jiushan. Research on the gallium nitride micromechanical resonators based on silicon[J]. 2022, 39(3): 101-105. DOI： 10.19304/J.ISSN1000-7180.2021.0724.

摘要

GaN不仅具有与硅媲美的较高声速，而且也有与氮化铝相当(AlN)的大压电系数

所以是制作MEMS谐振器的有力备选材料.研究设计了一款硅基压电氮化镓(GaN)MEMS谐振器.利用GaN中的二维电子气(2DEG)可作为开关嵌入电极的特性，通过GaN压电材料实现由电极、压电薄膜、电极组成薄膜微机械谐振器.工作时在两个电极之间的压电薄膜内产生厚度剪切振动模式，压电薄膜内部就形成了振荡，通过压电效应的正交应力(σx和σy)能够提供相关的应力场从而增加机电共振.使用微机电系统技术和平面加工工艺对谐振器进行了制作，GaN谐振单元物理尺寸90 m.采用了无需加载功率对于谐振器无损伤的XeF2气体释放硅基底(111)形成了GaN谐振器，这样能够减少谐振器的粗糙度、较小残余应力，避免杂质和缺陷造成的散射.测试表明，谐振频率为12.56 MHz，谐振腔的品质因数为3 600.

Abstract

GaN is a strong candidate for making MEMS resonators because of its higher acoustic velocity compared with silicon and higher piezoelectric coefficient compared with aluminum nitride (AlN). A silicon-based piezoelectric GaN MEMS resonator was designed. The two-dimensional electron gas (2DEG) in GaN can be used as a switch embedded electrode characteristic

and a thin-film micromechanical resonator composed of electrodes

piezoelectric films

and electrodes can be realized through GaN piezoelectric materials. During operation

a thickness shear vibration mode is generated in the piezoelectric film between the two electrodes

and oscillation is formed inside the piezoelectric film. The orthogonal stress (σx and σy) of the piezoelectric effect can provide the relevant stress field to increase Electromechanical resonance. The resonator is fabricated by MEMS technology and planar processing technology. The physical size of GaN resonant unit is 90 m. The GaN resonator is formatted by releasing silicon substrate (111) using the XeF2 gas

which does not damage the resonator without loading power. In this way

the roughness and residual stress of the resonator thin can be reduced

and the scattering caused by impurities and defects can be avoided. The test results show that the resonant frequency is 12.56 MHz and the quality factor of the resonant cavity is 3 600.

关键词

Keywords

references

HÖRBERG M, EMANUELSSON T, LIGANDER P, et al. RF-MEMS tuned GaN HEMT based cavity oscillator for X-band[J]. IEEE Microwave and Wireless Components Letters, 2017, 27(1): 46-48. DOI: 10.1109/LMWC.2016.2629973.

SARZAtA R P, ŚPIEWAK P, WASIAK M. Influence of resonator length on performance of nitrideTJ VCSEL[J]. IEEE Journal of Quantum Electronics, 2019, 55(6): 2400509. DOI: 10.1109/JQE.2019.2946386.

FAUCHER M, CORDIER Y, WERQUINM, et al. Electromechanical transconductance properties of a GaN MEMS resonator with fully integrated HEMT transducers[J]. Journal of Microelectromechanical Systems, 2012, 21(2): 370-378. DOI: 10.1109/JMEMS.2011.2179010.

JI X, DONG W X, ZHANG Y M, et al. Fabrication and characterization of one-port surface acoustic wave resonators on semi-insulating GaNsubstrates[J]. Chinese Physics B, 2019, 28(6): 067701. DOI: 10.1088/1674-1056/28/6/ 067701.

RAIS-ZADEH M, GOKHALE V J, ANSARI A, et al. Gallium Nitride as an electromechanical material[J]. Journal of Microelectromechanical Systems, 2014, 23(6): 1252-1271. DOI: 10.1109/JMEMS.2014.2352617.

REEDER T M, CULLEN D E. Surface-acoustic-wave pressure and temperature sensors[J]. Proceedings ofthe IEEE, 1976, 64(5): 754-756. DOI: 10.1109/PROC.1976.10205.

ANSARI A, RAIS-ZADEH M. A thickness-mode AlGaN/GaN resonant body high electron mobility transistor[J]. IEEE Transactions onElectron Devices, 2014, 61(4): 1006-1013. DOI: 10.1109/TED.2014.2302991.

MVLLER A, KONSTANTINIDIS G, GIANGUI, et al. GaNmembrane supported SAW pressure sensors with embedded temperature sensing capability[J]. IEEE Sensors Journal, 2017, 17(22): 7383-7893. DOI: 10.1109/JSEN.2017.2757770.

NAING T L, ROCHELEAU T O, ALON E, et al. Low-power MEMS-basedPierce oscillator using a 61-MHz capacitive-gap disk resonator[J]. IEEE Transactions on Ultrasonics, Ferroelectrics, and Frequency Control, 2020, 67(7): 1377-1391. DOI: 10.1109/TUFFC.2020.2969530.

WUNDERER T, JESCHKE J, YANG Z H, et al. Resonator-length dependence of electron-beam-pumped UV-A GaN-based lasers[J]. IEEE Photonics Technology Letters, 2017, 29(16): 1344-1347. DOI: 10.1109/LPT.2017.2722359.

KWON H K, VUKASIN G D, BOUSSE N E, et al. Crystal orientation dependent dual frequency ovenized MEMS resonator with temperature stability and shock robustness[J]. Journal of Microelectromechanical Systems, 2020, 29(5): 1130-1131. DOI: 10.1109/JMEMS.2020.3012109.

POPA L C, WEINSTEIN D. L-band Lamb mode resonators in Gallium Nitride MMIC technology[C]//2014 IEEE InternationalFrequencyControl Symposium(FCS). Taiwan, China: IEEE, 2014: 1-4. DOI: 10.1109/FCS.2014.6859997.

ORTIZ L C, KWON H K, RODRIGUEZ J, et al. Low-power dual mode MEMS resonators with PPB stability over temperature[J]. Journal of Microelectromechanical Systems, 2020, 29(2): 190-201. DOI: 10.1109/JMEMS.2020.2970609.

CARUNTU D I, BOTELLO M A, REYES C A, et al. Frequency-amplitude response of superharmonic resonance of second order of electrostatically actuated MEMS cantilever resonators[J]. International Journal of Non-Linear Mechanics, 2021(133): 103719. DOI: 10.1016/j.ijnonlinmec.2021. 103719.

代雪梅, 张晓青. RF-MEMS谐振器的性能优化研究[J]. 数字技术与应用, 2019, 37(6): 123-124. DOI: 10.19695/j.cnki.cn12-1369.2019.06.70. DAI X M, ZHANG X Q. Study on performance optimization of RF-MEMS resonators[J]. Digital Technology % Application, 2019, 37(6): 123-124. DOI: 10.19695/j.cnki.cn12-1369.2019.06.70.

QAMAR A, RAIS-ZADEH M. Coupled BAW/SAW resonators using AlN/Mo/Si and AlN/Mo/GaNlayered structures[J]. IEEE Electron Device Letters, 2019, 40(2): 321-324. DOI: 10.1109/LED.2018.2890755.

浏览量

下载量

CSCD

文章被引用时，请邮件提醒。

提交

工具集

关联资源

基于改进RT-DETR的航拍小目标检测算法

注意力机制与改进密集卷积引导的信息隐藏模型

AlN/GaN混合缓冲层双异质结p-GaN HEMT直流特性仿真

一种基于特征上下文理解与切片分析的肺结核检测算法

基于区块链的AI生成内容溯源框架设计研究