胡从振.SOI FinFET辐射效应研究[D].西安电子科技大学,2019(02).

潘琦.SOI器件的辐照效应及电路加固技术的研究[D].西安电子科技大学,2014(03).

Rao M. V. Ganeswara,Ramanjaneyulu N.,Pydi Balamurali,Soma Umamaheshwar,Babu K. Rajesh,Prasad Satti Harichandra.Enhancing Performance of Dual-Gate FinFET with High-K Gate Dielectric Materials in 5 nm Technology: A Simulation Study[J].Transactions on Electrical and Electronic Materials,2023.

Kumar Jeetendra,Birla Shilpi,Agarwal Garima.A review on effect of various high-k dielectric materials on the performance of FinFET device[J].Materials Today: Proceedings,2023.

Chi Yaqing,Wu Zhenyu,Huang Pengcheng,Sun Qian,Liang Bin,Zhao Zhenyu.Characterization of single-event transients induced by high LET heavy ions in 16 nm bulk FinFET inverter chains[J].Microelectronics Reliability,2022.

Pahwa Girish,Kushwaha Pragya,Dasgupta Avirup,Salahuddin Sayeef,Hu Chenming.Compact Modeling of Temperature Effects in FDSOI and FinFET Devices Down to Cryogenic Temperatures[J].IEEE TRANSACTIONS ON ELECTRON DEVICES,2021.

Ma Teng,Bonaldo Stefano,Mattiazzo Serena,Baschirotto Andrea,Enz Christian,Paccagnella Alessandro,Gerardin Simone.TID Degradation Mechanisms in 16-nm Bulk FinFETs Irradiated to Ultrahigh Doses[J].IEEE TRANSACTIONS ON NUCLEAR SCIENCE,2021.

Borghello Giulio,Faccio Federico,Termo Gennaro,Michelis Stefano,Costanzo Sebastiano,Koch Henri D.,Fleetwood Daniel M..Effects of Bias and Temperature on the Dose-Rate Sensitivity of 65-nm CMOS Transistors[J].IEEE TRANSACTIONS ON NUCLEAR SCIENCE,2021.

Won Hyeonjae,Kang Myounggon.Analysis of Circuit Simulation Considering Total Ionizing Dose Effects on FinFET and Nanowire FET[J].Applied Sciences,2021.

Mohammad Hossein Moaiyeri,Farnaz Sabetzadeh,Shaahin Angizi.An efficient majority-based compressor for approximate computing in the nano era[J].Microsystem Technologies,2018.

Zhang Chun Min,Jazaeri Farzan,Pezzotta Alessandro,Bruschini Claudio,Borghello Giulio,Faccio Federico,Mattiazzo Serena,Baschirotto Andrea,Enz Christian.Characterization of GigaRad Total Ionizing Dose and Annealing Effects on 28-nm Bulk MOSFETs[J].IEEE Transactions on Nuclear Science,2017.

Leung, G..Variability Impact of Random Dopant Fluctuation on Nanoscale Junctionless FinFETs[J].IEEE Electron Device Letters,2012.