InAs量子点分布反馈激光器的掩埋光栅优化设计

刘帅呈; 刘昊; 江晨; 漆旋亮; 王博建; 曹帅; 王俊; 王琦; 任晓敏

doi:10.3788/gzxb20265507.0714003

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InAs量子点分布反馈激光器的掩埋光栅优化设计

激光与激光光学 | 更新时间：2026-06-12

- InAs量子点分布反馈激光器的掩埋光栅优化设计
- Optimized Design of Buried Grating for InAs Quantum Dot Distributed Feedback Lasers
- 光子学报 2026年页码：1-9
- 作者机构：
  
  北京邮电大学电子工程学院信息光子学与光通信全国重点实验室，北京 100876
- 作者简介：
  
  刘帅呈（1998—），男，博士研究生在读，主要研究方向为半导体激光器. Email: liusc@bupt.edu.cn
  刘昊（1992—），男，讲师，博士，主要研究方向为硅基光电集成. Email: hliu@bupt.edu.cn
- 基金信息：
  
  国家自然科学基金(62204021);国家重点研发计划重点专项课题(2018YFB2200104);国家自然科学基金创新研究群体项目(62021005);信息光子学与光通信全国重点实验室(北京邮电大学)基金(IPOC2022ZT05);高校学科创新引智计划(BP0719012)
- DOI：10.3788/gzxb20265507.0714003
  中图分类号： TN365
- CSTR：32255.14.gzxb20265507.0714003
- 收稿：2026-02-14，
  
  修回：2026-04-22，
  
  录用：2026-04-23，
- 稿件说明：
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刘帅呈，刘昊，江晨，等. InAs量子点分布反馈激光器的掩埋光栅优化设计［J］.光子学报，2026，55（7）：0714003

LIU Shuaicheng， LIU Hao， JIANG Chen， et al. Optimized Design of Buried Grating for InAs Quantum Dot Distributed Feedback Lasers［J］. Acta Photonica Sinica， 2026， 55（7）：0714003
刘帅呈，刘昊，江晨，等. InAs量子点分布反馈激光器的掩埋光栅优化设计［J］.光子学报，2026，55（7）：0714003 DOI： 10.3788/gzxb20265507.0714003. CSTR： 32255.14.gzxb20265507.0714003.

LIU Shuaicheng， LIU Hao， JIANG Chen， et al. Optimized Design of Buried Grating for InAs Quantum Dot Distributed Feedback Lasers［J］. Acta Photonica Sinica， 2026， 55（7）：0714003 DOI： 10.3788/gzxb20265507.0714003. CSTR： 32255.14.gzxb20265507.0714003.

摘要

分布反馈激光器中光栅耦合系数κ的稳定性对器件单模输出和工艺可实现性具有重要影响。针对传统掩埋光栅结构中κ对刻蚀深度高度敏感的问题，本文提出了一种用于InAs量子点分布反馈激光器的侧向掩埋光栅结构，该结构通过将光栅置于脊型波导两侧，使侧向光栅与有源区光场产生横向耦合，从而使κ主要由侧向结构参数决定，可降低其对刻蚀深度及外延结构波动的敏感性。系统分析了脊波导宽度、光栅尺寸、刻蚀深度、套刻误差以及外延结构等参数对κ的影响规律。仿真结果表明，该侧向掩埋光栅结构在较宽工艺参数范围内能够实现稳定、可控的κ，并具有良好的工艺容忍性。激光器模拟结果进一步表明，基于该结构的分布反馈激光器可实现稳定的单纵模激射，整体性能与常规掩埋光栅结构相当。

Abstract

This study aims to design a lateral buried grating structure for InAs quantum dot （QD） distributed feedback （DFB） lasers to resolve the high sensitivity of the coupling coefficient （κ） to etching depth in conventional buried gratings. In typical GaAs-based or silicon-based QD lasers， the precise control of κ is often hindered by the lack of effective etch-stop layers， leading to significant performance instability. By positioning the grating on both sides of the ridge waveguide， this research utilizes a lateral coupling mechanism to make κ primarily dependent on lateral geometric parameters rather than vertical etching precision. The ultimate objective is to provide a fabrication-friendly design that ensures stable single-mode operation with high tolerance to process fluctuations.The investigation utilizes the finite difference eigenmode （FDE） method and the mode convolution method to analyze the impact of various structural parameters on device performance. Initially， a three-layer equivalent slab waveguide model is employed to calculate the single-mode cutoff conditions， helping to sel

ect an appropriate ridge width between 2.5 μm and 5 μm. The lateral buried grating is located in the upper waveguide layer on both sides of the ridge bottom， close to the active region. The research quantified how κ is affected by ridge width， grating width （0 to 10 μm）， and grating etching depth （0 to 200 nm）. Furthermore， the study evaluated the influence of overlay errors （0 to 1 μm） caused by UV lithography alignment between the grating and the ridge waveguide. Structural robustness is also assessed by simulating variations in the waveguide layer thickness （60 to 200 nm） and the number of InAs QD layers （5 to 8 layers）. Finally， a device-level simulation is performed for a 1 mm cavity to characterize the optoelectronic performance.The simulation results reveal distinct physical trends and significant advantages of the lateral buried grating structure. As ridge width increases from 2.5 μm to 5 μm， κ decreases monotonically from 1.60 mm

-1

to 0.25 mm

-1

because the optical field becomes increasingly concentrated beneath the ridge center， reducing overlap with the lateral gratings. Regarding grating width， κ rapidly increases and saturates at approximately 0.99 mm

-1

when the grating width reaches 1 μm， indicating that further widening beyond this value yields negligible additional feedback. Most importantly， the lateral buried grating exhibits drastically reduced sensitivity to etching depth variations compared to conventional buried gratings. Over an etching depth range of 0-50 nm， κ for the lateral buried grating increases gradually from 0 to 1.17 mm

-1

， whereas for a conventional buried grating under identical conditions， κ surges from 0 to 18.02 mm

-1

. Thus， the variation amplitude of κ in the proposed structure is only about 6% that of the conventional design. Furthermore， when etching depth extends to 200 nm， κ of the lateral buried grating reaches only about 1.9 mm

-1

， still far below the values of conventional gratings. The structure also demon

strates reasonable tolerance to overlay errors： within the typical UV lithography alignment accuracy of 0.5 μm， κ increases from 0.99 mm

-1

to approximately 1.8 mm

-1

for a 3 μm ridge width， a moderate change that remains manageable for device design. For ridge widths of 4 μm or larger， the overlay sensitivity is even lower. The lateral buried grating also shows excellent epitaxial robustness： when the waveguide layer thickness varies from 60 nm to 200 nm， κ increases only slightly （e.g.， from 1.17 mm

-1

to about 1.35 mm

-1

at 30 nm etching depth）. Similarly， increasing the number of QD layers from 5 to 8 causes κ to rise merely from 0.99 mm

-1

to 1.18 mm

-1

for a 3 μm ridge width. Based on these analyses， a recommended parameter set （ridge width 3-5 μm， grating width 5 μm， etching depth 30 nm） yields κ in the range of 1-3 mm

-1

， suitable for optimal DFB operation. Device-level simulations confirm that the lateral buried grating DFB laser achieves stable single-longitudinal-mode lasing with high side-mode suppression ratio （SMSR） and power-current-voltage （P-I-V） characteristics comparable to conventional buried grating designs， indicating no performance penalty.The proposed lateral buried grating structure effectively decouples the coupling coefficient κ from vertical etching depth variations， eliminating the need for etch-stop layers in GaAs-based or silicon-based InAs quantum dot DFB lasers. This design intrinsically provides high process stability and controllability， reducing κ variation to only about 6% of that in conventional buried gratings under identical etching fluctuations. The structure exhibits excellent tolerance to variations in ridge width， grating width， waveguide layer thickness， and number of QD layers， while remaining compatible with standard UV lithography overlay accuracy. Importantly， this approach does not compromise device optoelectronic performance， as verified by laser simulations showing stable single-mode operation

and high SMSR. Given that the transverse coupling mechanism is independent of the specific active region material， the design is also readily applicable to quantum well lasers. This work offers a practical， high-tolerance， and fabrication-friendly solution for realizing high-performance， stable DFB lasers， facilitating the development of next-generation photonic integrated circuits and optical interconnects.

关键词

Keywords

references

SHEKHAR S ， BOGAERTS W ， CHROSTOWSKI L ， et al . Roadmapping the next generation of silicon photonics ［J］. Nat. Commun. ， 2024 ， 15 （ 1 ）： 751 .

LU Dan ， YANG Qiulu ， WANG Hao ， et al . Review of semiconductor distributed feedback lasers in the optical communication band ［J］. Chinese Journal of Lasers ， 2020 ， 47 （ 7 ）： 0701001 .

陆丹，杨秋露，王皓，等 . 通信波段半导体分布反馈激光器［J］. 中国激光， 2020 ， 47 （ 7 ）： 0701001 . DOI: 10.3788/CJL202047.0701001 http://dx.doi.org/10.3788/CJL202047.0701001

CHEN SiMing ， LI Wei ， WU Jiang ， et al . Electrically pumped continuous-wave Ⅲ-Ⅴ quantum dot laser on silicon ［J］. Nature Photonics ， 2016 ， 10 （ 5 ）： 307 - 311 .

LIU Shuaicheng ， WANG Jun ， LIU Hao ， et al . Ultralow-threshold 1.3 μm InAs/GaAs quantum dot distributed feedback lasers with uniform buried grating ［J］. Physica Scripta ， 2026 ， 101 （ 2 ）： 025509 .

WANG Jun ， LIU Zhuoliang ， LIU Hao ， et al . High slope-efficiency quantum-dot lasers grown on planar exact silicon （001） with asymmetric waveguide structures ［J］. Optics Express ， 2022 ， 30 （ 7 ）： 11563 - 11571 .

AZOUIGUI S ， CONG D Y ， MARTINEZ A ， et al . Temperature dependence of dynamic properties and tolerance to optical feedback of high-speed 1.3 μm DFB quantum-dot lasers ［J］. IEEE Photonics Technology Letters ， 2011 ， 23 （ 9 ）： 582 - 584 .

DEPPE D G ， SHAVRITRANURUK K ， OZGUR G ， et al . Quantum dot laser diode with low threshold and low internal loss ［J］. Electronics Letters ， 2009 ， 45 （ 1 ）： 54 - 56 .

FATHFOUR S ， MI Z T ， BHATTACHARYA P ， et al . The role of Auger recombination in the temperature-dependent output characteristics （T₀=+∞） of p-doped 1.3 μm quantum dot lasers ［J］. Applied Physics Letters ， 2004 ， 85 （ 22 ）： 5164 - 5166 .

KAGEYAMA T ， NISHI K ， YAMAGUCHI M ， et al . Extremely high temperature （220℃） continuous-wave operation of 1300-nm-range quantum-dot lasers ［C］. 2011 Conference on Lasers and Electro Optics Europe and 12th European Quantum Electronics Conference （CLEO EUROPE/EQEC）， May 22-26， 2011 ， Munich， Germany. New York ΙΕΕΕ ， 2011 ： 12248755 .

SODA H ， KOTAKI Y ， SUDO H ， et al . Stability in single longitudinal mode operation in GaInAsP/InP phase-adjusted DFB lasers ［J］. IEEE Journal of Quantum Electronics ， 1987 ， 23 （ 6 ）： 804 - 814 .

WHITEAWAY J E A ， THOMPSON G H B ， COLLAR A J ， et al . The design assessment of λ/4 phase-shifted DFB laser structures ［J］. IEEE journal of quantum electronics ， 1989 ， 25 （ 6 ）： 1261 - 1279 .

CHEN T R ， HSIN W . Very high power DFB CW light source at 1550 nm for high-performance supertrunking ［C］. Semiconductor Lasers III. SPIE ， 1998 ， 3547 ： 24 - 36 .

TAKADA K ， TANAKA Y ， MATSUMOTO T ， et al . Temperature-stable 10 . 3-Gb/s operation of 1 .3-µm quantum-dot DFB lasers with GaInP/GaAs gratings［C］. Optical Fiber Communication Conference. Optica Publishing Group ， 2009： JWA28 .

HU Junjie ， KLOTZKIN D ， HUANG Jiasheng ， et al . Index-coupled quantum-dot 1.3μm distributed-feedback lasers fabricated with a combination MOCVD/MBE process ［J］. IEEE Photonics Technology Letters ， 2011 ， 23 （ 6 ）： 329 - 331 .

STUBENRAUCH M ， STRACKE G ， ARSENIJEVIC D ， et al . 15 Gb/s index-coupled distributed-feedback lasers based on 1.3μm InGaAs quantum dots ［J］. Applied Physics Letters ， 2014 ， 105 （ 1 ）： 011103-011103-4 .

YANG Zhuohui ， DING Zhengqing ， LIU Lin ， et al . High-performance distributed feedback quantum dot lasers with laterally coupled dielectric gratings ［J］. Photonics Research ， 2022 ， 10 （ 5 ）： 1271 - 1279 .

WANG Shuai ， LV Zunren ， YANG Qiulu ， et al . High-power， narrow-linewidth， and low-noise quantum dot distributed feedback lasers ［J］. Laser & Photonics Reviews ， 2023 ， 17 （ 9 ）： 2200979 .

HE Wei ， JIANG Zhongjun ， CHEN Jingwei ， et al . Numerical analysis of multilayer optical waveguide modes based on effective refractive index method ［J］. Study On Optical Communications ， 2023 ， 49 （ 3 ）： 60 .

何伟，蒋忠君，陈经纬，等 . 基于有效折射率法的多层光波导模式数值分析［J］. 光通信研究， 2023 ， 49 （ 3 ）： 60 .

ZHANG Naling ， JING Hongqi ， YUAN Qinghe ， et al . High Power 1060 nm Tapered Laser ［J］. Acta Optica Sinica ， 2022 ， 42 （ 5 ）： 0514002 .

张娜玲，井红旗，袁庆贺，等 . 高功率1060 nm锥形激光器［J］. 光学学报， 2022 ， 42 （ 5 ）： 0514002 . DOI: 10.3788/AOS202242.0514002 http://dx.doi.org/10.3788/AOS202242.0514002

CHANG Jinyuan ， XIONG Cong ， QI Qiong ， et al . 1550 nm high-power fundamental transverse mode semiconductor laser and its temperature characteristics ［J］. Acta Optica Sinica ， 2023 ， 43 （ 7 ）： 0714003 .

常津源，熊聪，祁琼，等 . 1550 nm高功率基横模半导体激光器及温度特性［J］. 光学学报， 2023 ， 43 （ 7 ）： 0714003 . DOI: 10.3788/AOS221772 http://dx.doi.org/10.3788/AOS221772

LAAKSO A ， DUMITRESCU M ， VIHERIÄLÄ J ， et al . Optical modeling of laterally-corrugated ridge-waveguide gratings ［J］. Optical and quantum electronics ， 2008 ， 40 （ 11 ）： 907 - 920 .

HAQ A U ， DJURDJANOVIC D . Robust control of overlay errors in photolithography processes ［J］. IEEE Transactions on Semiconductor Manufacturing ， 2019 ， 32 （ 3 ）： 320 - 333 .

JIN Hao ， QI Yuejing . Review of overlay error and controlling methods in alignment system for advanced lithography ［C］. Thirteenth International Conference on Information Optics and Photonics （CIOP 2022 ）. SPIE ， 2022 ， 12478 ： 1002 - 1017 .

LI Yanli ， LIU Xianhe ， WU Qiang . Evolution and updates of advanced photolithography technology ［J］. Laser & Optoelectronics Progress ， 2022 ， 59 （ 9 ）： 0922006 .

李艳丽，刘显和，伍强 . 先进光刻技术的发展历程与最新进展［J］. 激光与光电子学进展， 2022 ， 59 （ 9 ）： 0922006 . DOI: 10.3788/LOP202259.0922006 http://dx.doi.org/10.3788/LOP202259.0922006

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