In the paper

a Micro-Power LDO with Reverse-Voltage Protection is presented.For the one hand

utilizing a new Self-Adaptive Gate/Bulk Biasing technique

the gate and bulk voltages of the pass transistor can track the output in the case of reverse voltage

which make the channel pinched and the parasitic drain-to-bulk diode zero biased.Therefore

the issues on the reverse channel current and Latch-Up under reverse voltage are dealt with.On the other hand

using the high efficiency bipolar buffering and zero-pole offsetting synchronously in the loop

not only the LDO stability is ensured but also the dropout voltage is minimized.The proposed LDO is fabricated in the BiCMOS process.The testing results show that the reverse voltage can reach 9V

the load and line regulation are 0.25 mV/mA and 0.6mV/V respectively

the dropout voltage on full load(250mA) is only 70 mV.In addition

the quiescent currents at no load and full load are only 7A and 7.7A respectively.