应用于4G的两级BiCMOS射频功率放大器设计

王巍; 蔡文琪; 莫啸; 胡凤; 王明耀; 杨正琳; 袁军

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应用于4G的两级BiCMOS射频功率放大器设计

更新时间：2026-09-04

- 应用于4G的两级BiCMOS射频功率放大器设计
- Design of Tow Stage SiGe BiCMOS RF Power Amplifier for 4G Applications
- 微电子学与计算机 2016年33卷第1期页码：56-59
- 作者机构：
  
  重庆邮电大学机构光电工程学院,重庆,400065
- 作者简介：
- 基金信息：
- DOI：
  中图分类号：
- 纸质出版：2016
- 稿件说明：
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王巍, 蔡文琪, 莫啸, 胡凤, 王明耀, 杨正琳, 袁军. 应用于4G的两级BiCMOS射频功率放大器设计[J]. 微电子学与计算机, 2016, 33(1): 56-59, 64.

WANG Wei, CAI Wen-qi, MO Xiao, et al. Design of Tow Stage SiGe BiCMOS RF Power Amplifier for 4G Applications[J]. 2016, 33(1): 56-59.
王巍, 蔡文琪, 莫啸, 胡凤, 王明耀, 杨正琳, 袁军. 应用于4G的两级BiCMOS射频功率放大器设计[J]. 微电子学与计算机, 2016, 33(1): 56-59, 64. DOI：

WANG Wei, CAI Wen-qi, MO Xiao, et al. Design of Tow Stage SiGe BiCMOS RF Power Amplifier for 4G Applications[J]. 2016, 33(1): 56-59. DOI：

摘要

设计一个基于SiGe BiCMOS工艺的共源共栅结构的两级功率放大器.第一级采用差分共源放大器

将输入匹配送来的信号进行预放大

同时抑制噪声.第二级主功放采用BiFET共源共栅结构

以提高线性度.基于JAZZ 0.18 m SiGe BiCMOS工艺库

采用Cadence Spectre RF对功率放大器进行仿真.实验结果表明

在3.3 V电源电压下

最高功率增益达到32 dB

输出1 dB压缩点处功率为29 dBm

有较好地线性度

在2.3~2.7 GHz频段内S11和S22均小于-10 dB

匹配良好.最大功率附加效率为22.1%

可用于WIMAX无线通信的2.3~2.7 GHz频段.

Abstract

A 2-stage cascode structure power amplifier(PA) with SiGe BiCMOS technology is proposed.The first stage is a differential common-source amplifier

which is used to amplify the signal from the input matching

meanwhile

it can suppress noise. And the second stage is a BiFET cascade amplifier which is used as main power amplifier to improve the linearity. The proposed PA is designed with Jazzs 0.18 m SiGe BiCMOS technology

The simulation results with Spectre RF show that the PA achieved a Gain of 32 dB

a P1dB of 29 dBm. Within the operating frequency rage of 2.3~2.7 GHz

the PA has an S11 and S22 below -10 dB

and the peak PAE is 22.1%.

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references

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胡锦, 陶可欣, 郝明丽, 等. 基于SiGe工艺的高增益射频功率放大器[J]. 微电子学与计算机, 2012, 29(2): 18-21. DOI: 18

阮颖, 陈磊, 田亮, 等. 基于0.18μm SiGe BiCMOS工艺的高线性射频功率放大器[J]. 微电子学, 2010, 40(4): 469-472. DOI: 469

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