石墨烯晶体管转移特性对栅压的依赖现象研究

张庆伟; 李平; 王刚; 曾荣周; 王恒; 周金浩

Chinese

您当前的位置：

首页 >

文章列表页 >

石墨烯晶体管转移特性对栅压的依赖现象研究

更新时间：2026-09-04

- 石墨烯晶体管转移特性对栅压的依赖现象研究
- Graphene Transistor Transfer Properties Phenomenon Research Dependence on Gate Voltage
- 微电子学与计算机 2017年34卷第6期页码：36-39
- 作者机构：
  
  电子科技大学电子薄膜与集成器件国家重点实验室机构,四川,成都,610054
- 作者简介：
- 基金信息：
  
  国家自然科学基金项目 61404021
- DOI：
  中图分类号：
- 纸质出版：2017
- 稿件说明：
移动端阅览
张庆伟, 李平, 王刚, 曾荣周, 王恒, 周金浩. 石墨烯晶体管转移特性对栅压的依赖现象研究[J]. 微电子学与计算机, 2017, 34(6): 36-39.

ZHANG Qing-wei, LI Ping, WANG Gang, et al. Graphene Transistor Transfer Properties Phenomenon Research Dependence on Gate Voltage[J]. 2017, 34(6): 36-39.
张庆伟, 李平, 王刚, 曾荣周, 王恒, 周金浩. 石墨烯晶体管转移特性对栅压的依赖现象研究[J]. 微电子学与计算机, 2017, 34(6): 36-39. DOI：

ZHANG Qing-wei, LI Ping, WANG Gang, et al. Graphene Transistor Transfer Properties Phenomenon Research Dependence on Gate Voltage[J]. 2017, 34(6): 36-39. DOI：

摘要

为了研究石墨烯场效应晶体管的不同测试方法

对其转移特性的影响

在栅压为0~5 V之间扫描的情况下

研究了石墨烯晶体管的狄拉克点变化规律.其变化呈现以下特点: 连续地正向扫描或反向扫描时

随着次数的增加

狄拉克点电压逐渐变大; 先加栅压保持一段时间后

再测转移特性

0 V保持时

狄拉克点电压不变

5 V保持时

狄拉克点电压变大; 测试之间相互独立时

正向扫描的狄拉克点电压小于反向扫描的狄拉克点电压; 双向连续扫描时

第一次测试影响第二次的结果.以上现象表明了狄拉克点电压的大小和已扫描过的栅压大小有关.我们把上述的特点归因于电子注入到氧化铪表面的陷阱中.这些现象的发现和解释对石墨烯器件的可靠性

石墨烯导电特性的控制

石墨烯电路的实现有明显的参考意义.

Abstract

To research the effect of transfer characteristic of graphene transistors by different test methods

change rules of Dirac points are researched

under the condition of that the scan range of gate voltage is between 0 V and 5 V. The changes present the following regularity. The Dirac point voltages increase gradually with the increase of scan times

when forward or backward sweeps are performed continuously. Before measurement

gate voltage hold is performed

then the Dirac point voltages have no changes when gate voltage sweeps with hold by 0V

but they increase with hold by 5V. When measurements are mutual independent

the Dirac point voltages with forward sweep are less than that with backward sweep. The first measurement can affect the second measurement when the double tests are performed. From the phenomenon above

Dirac point voltages are related to gate voltages that have swept. These properties are attributed to that electronics inject traps in surface of HfO. These finding and analysis are significant in the graphene reliability

the control of graphene conduction characteristics

and the realization of graphene circuits.

关键词

Keywords

references

Liao Z M, Han B H, Zhou Y B, et al. Hysteresis reversion in graphene field-effect transistors[J]. The journal of chemical physics, 2010, 133 (4): 044703. DOI: 044703

Wang R, Wang S, Zhang D, et al. Control of carrier type and density in exfoliated graphene by interface engineering[J]. ACS Nano, 2010, 5(1): 408-412. DOI: 408

Hsu A, Wang H, Kim K K, et al. Impact of graphene interface quality on contact resistance and RF device performance[J]. IEEE electron device letters, 2011, 32(8): 1008-1010. DOI: 1008

Wang Z G, Li P J, Chen Y F, et al. Air-stable n-type doping of graphene from overlying Si3N4 film[J]. Applied Surface Science, 2014, 307 (18): 712-715. DOI: 712

Feng T T, Xie D, Li G, et al. Temperature and gate voltage dependent electrical properties of graphene field-effect transistors[J]. Solar Energy, 2014, 107(9): 74-81. DOI: 74

Geim A K, Novoselov K S. The rise of grapheme[J]. Nature Materials, 2007, 6(3): 183-191. DOI: 183

Wang H M, Wu Y H, Cong C X, et al. Hysteresis of electronic transport in graphene transistors[J]. ACS Nano, 2010, 4(12): 7221-7228. DOI: 7221

Xu H, Chen Y, Zhang J, et al. Investigating the mechanism of hysteresis effect in graphene electrical field device fabricated on SiO2 substrates using raman spectroscopy[J]. Small, 2012, 18(8): 2833-2840. DOI: 2833

Joshi P, Romero H E, Neal A T, et al. Intrinsic doping and gate hysteresis in graphene field effect devices fabricated on SiO2 substrates[J]. Journal of physics: condensed matter, 2010, 22(33): 1-6. DOI: 1

陈智, 王子欧, 李亦清, 等. 表面粗糙对石墨烯场效应晶体管电流的影响[J]. 微电子学与计算机, 2012, 29(12): 154-156. DOI: 154

浏览量

下载量

CSCD

文章被引用时，请邮件提醒。

提交

工具集

关联资源

面向处理器分支预测单元的Spectre攻击轻量化防御方法

基于改进RT-DETR的航拍小目标检测算法

一种基于特征上下文理解与切片分析的肺结核检测算法

AlN/GaN混合缓冲层双异质结p-GaN HEMT直流特性仿真

基于多尺度融合与小目标增强的航拍车辆检测算法