1. 中国科学院微电子研究所 机构 , 微电子器件与集成技术重点实验室,北京,100029
2. 中国科学院大学 机构
纸质出版:2018
移动端阅览
李云, 张锋. 一种基于RRAM热串扰的奇偶重排编码算法[J]. 微电子学与计算机, 2018, 35(4): 26-31.
LI Yun, ZHANG Feng. An Efficient Parity Rearrangement Coding Scheme for RRAM Thermal Crosstalk Effects[J]. 2018, 35(4): 26-31.
阻变存储器(resistive random access memory
RRAM)作为未来一种高性能的非挥发性存储器
具有面积小、操作电压低、兼容性好等特点.但是
在高集成存储器和频繁的写操作下
热串扰问题会严重影响RRAM的保持特性.严重情况下
热串扰问题甚至会造成一系列的错误翻转.因此
本文引入了一种高效的奇偶重排编码算法(parity rearrangement coding scheme
PRCoder)来有效缓解热串扰对RRAM的影响
并在算法层和电路层上分别进行设计与仿真.试验结果表明
PRCoder算法平均降低了32.7%的误翻转率
并同时只会在每一个存储行带来1 bit的额外开销.此外
PRCoder仅仅带来0.3%的性能增加和0.008%的面积增加.
Resistive random access memory (RRAM) is a high-performance nonvolatile memory with the feature of small area
low operation voltage
and good compatibility. However
when frequent writing operation at high density integration
the crosstalk problem will seriously influence the retention properties of RRAM
which is common to create some error flips in serious conditions. Therefore
we present an effective parity rearrangement coding scheme
that is PRCoder
to reduce the influence in RRAM. We present the PRCoder at algorithm level and emulate it at hardware level for various scenarios. Experiments indicate that PRCoder can decrease the accidentally flips by about 32.7% on average
which is caused by thermal crosstalk
with just one additional bit of redundancy per storage line. Moreover
PRCoder causes an ignorable performance spending of ~0.3% with inferior to 0.008% extra RRAM area.
Ninomiya T, Muraoka S, Wei Z, et al. Improvement of data retention during long-term use by suppressing conductive filament expansion in taox bipolar-reram[J]. IEEE Electron Device Letters, 2013, 34(6): 762-764. DOI: 762
Xue X, Jian W, Yang J, et al. A 0.13um 8Mb logic-based cuxsiyo reram with self-adaptive operation for yield enhancement and power reduction[J]. Solid State Circuits IEEE Journal of, 2013, 48(5): 1315-1322. DOI: 1315
Russo U, Ielmini D, Cagli C, et al. Self-accelerated thermal dissolution model for reset programming in unipolar resistive-switching memory (RRAM) Devices[J]. Electron Devices, IEEE Transactions on, 2009, 56(2): 193-200. DOI: 193
Yalon E, Riess I, Ritter D. Heat dissipation in resistive switching devices: comparision of thermal simulations and experimental results[J]. Electron Devices, IEEE Transactions on, 2014, 61(4): 1137- 1144. DOI: 1137
Li Y, Chen W, Lu W, et al. Impact of coupling capacitance on read operation of RRAM devices in 1D1R crossbar architectures[C]//Circuits and Systems(MWSCAS), 2014 IEEE 57th International Midwest Symposium on. Piscataway, NJ: IEEE, 2014: 989-992.
Sato Y, Kinoshita K, Aoki M, et al. Consideration of switching mechanism of binary metal oxide resistive junctions using a thermal reaction model[J]. Applied Physics Letters, 2007, 90(3): 033503. DOI: 033503
Chen Z, Huang P, Li H, et al. Optimization of uniformity in resistive switching memory by reducing thermal effect[C] //Solid-State and Integrated Circuit Technology(ICSICT), 2014 12th IEEE International Conference on. Piscataway, NJ: : IEEE, 2014: 1-3.
Guo X, Schindler C, Menzel S, et al. Understanding the switching-off mechanism in Ag+ migration based resistively switching model systems[J]. Applied Physics Letters, 2007, 91(13): 042107. DOI: 042107
Huang J J, Hou T H, Hsu C W, et al. Flexible one diode-one resistor crossbar resistive-switching memory[J]. Japanese Journal of Applied Physics, 2012, 51(4S): 04DD9. DOI: 04DD9
Li H, Chen H Y, Chen Z, et al. Write disturb analyses on half-selected cells of cross-point RRAM array[C]//Reliability Physics Symposium, 2014 IEEE International. Piscataway, NJ: IEEE, 2014.
Bersuker G, Gilmer D C, Veksler D, et al. Metal oxide RRAM switching mechanism based on conductive filament microscopic properties[C]//Electron Devices Meeting(IEDM), 2010 IEEE International. San Francisco, California, USA, IEEE, 2010, 19(6): 1-4.
Lin S, Zhao L, Zhang J, et al. Electrochemical simulation of filament growth and dissolution in conductive-bridging RAM (CBRAM) with cylindrical coordinates[C]//Proceedings of the Electron Devices Meeting (IEDM), 2012 IEEE International. San Francisco, CA, USA, IEEE, 2012, 26(3): 1-4.
Waser R, Dittmann R, Staikov G, et al. Redox-based resistive switching memories-nanoionic mechanisms, prospects, and challenges[J]. Advanced Materials, 2009, 21(25/26): 2632-2663. DOI: 2632
Lian W, Long S, Lu H, et al. Approaches for improving the performance of filament-type resistive switching memory[J]. Chinese Science Bulletin, 2011, 56(4/5): 461-464. DOI: 461
Guan W, Liu M, Long S, et al. On the resistive switching mechanisms of Cu/ZrO2: Cu/Pt[J]. Applied Physics Letters, 2008, 93(22): 223506. DOI: 223506
0
浏览量
8
下载量
0
CSCD
关联资源
相关文章
相关作者
相关机构
京公网安备11010602201714号