一种低电压低功耗射频接收前端电路的设计

杨璐; 王云阵; 林福江

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一种低电压低功耗射频接收前端电路的设计

更新时间：2026-09-04

- 一种低电压低功耗射频接收前端电路的设计
- A Low Voltage Low Power RF Receiver Front-End
- 微电子学与计算机 2017年34卷第12期页码：55-58
- 作者机构：
  
  中国科学技术大学电子科学与技术系,安徽,合肥,230027
- 作者简介：
- 基金信息：
- DOI：
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- 纸质出版：2017
- 稿件说明：
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杨璐, 王云阵, 林福江. 一种低电压低功耗射频接收前端电路的设计[J]. 微电子学与计算机, 2017, 34(12): 55-58, 62.

YANG Lu, WANG Yun-zhen, LIN Fu-jiang. A Low Voltage Low Power RF Receiver Front-End[J]. 2017, 34(12): 55-58.
杨璐, 王云阵, 林福江. 一种低电压低功耗射频接收前端电路的设计[J]. 微电子学与计算机, 2017, 34(12): 55-58, 62. DOI：

YANG Lu, WANG Yun-zhen, LIN Fu-jiang. A Low Voltage Low Power RF Receiver Front-End[J]. 2017, 34(12): 55-58. DOI：

摘要

介绍了一种工作在900 MHz ISM频段的低电压低功耗射频接收前端

包括一个自偏置反相器结构的低噪声放大器和一个开关跨导型混频器.低噪声放大器利用电流复用技术以有限的电流实现较高的增益.混频器采用开关跨导技术、电流复用技术以及动态阈值电压技术以实现低电压低功耗.该射频接收前端在180 nm CMOS工艺下流片并测试

测试结果显示

该射频接收前端在840~960 MHz频段内S11 < -10 dB

实现了22.5 dB转换增益及8.5 dB单边带噪声系数

输入三阶交调点为-10.1 dBm

在0.8 V电源电压下消耗2 mW功耗.

Abstract

A low voltage low power RF receiver front-end at 900 MHz ISM band is described. It includes a self-biased inverter low noise amplifier (LNA) and a switched transconductance (switched-g) mixer. The current-reuse technique is employed to achieve a high gain with restricted current consumption in the design of LNA. The mixer adopts switched-g

current-reuse and dynamic threshold voltage techniques for low voltage low power applications. The RF receiver front-end was fabricated and measured in 180nm CMOS process. The measurement results show the RF receiver front-end achieves a conversion gain of 22.5 dB with S11 < -10 dB in the 840~960 MHz band

a single side band noise figure of 8.5 dB

and an input referenced third intercept point of -10.1 dBm with only 2 mW power consumption from 0.8 V supply.

关键词

Keywords

references

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Sun J, Huang L, Liu H, et al. A 0.18 μm mixer merged with LNA exploiting noise cancellation [C] //Radio-Frequency Integration Technology (RFIT), 2011 IEEE International Symposium on. IEEE, 2011: 25-28.

Klumperink E A M, Louwsma S M, Wienk G J M, et al. A CMOS switched transconductor mixer[J]. IEEE Journal of Solid-State Circuits, 2004, 39(8): 1231-1240. DOI: 1231

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