一种低功耗高电源抑制比亚阈值基准电压源

杨艺丹; 赵梦恋; 刘胜; 董阳涛; 吴晓波

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一种低功耗高电源抑制比亚阈值基准电压源

更新时间：2026-09-04

- 一种低功耗高电源抑制比亚阈值基准电压源
- A Low Power and High Power Supply Rejection Ratio Voltage Reference Based on Subthreshold
- 微电子学与计算机 2018年35卷第8期页码：109-112
- 作者机构：
  
  浙江大学超大规模集成电路设计研究所,浙江,杭州,310027
- 作者简介：
- 基金信息：
  
  国家自然科学基金项目 61371032
- DOI：
  中图分类号：
- 纸质出版：2018
- 稿件说明：
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杨艺丹, 赵梦恋, 刘胜, 董阳涛, 吴晓波. 一种低功耗高电源抑制比亚阈值基准电压源[J]. 微电子学与计算机, 2018, 35(8): 109-112, 116.

YANG Yi-dan, ZHAO Meng-lian, LIU Sheng, et al. A Low Power and High Power Supply Rejection Ratio Voltage Reference Based on Subthreshold[J]. 2018, 35(8): 109-112.
杨艺丹, 赵梦恋, 刘胜, 董阳涛, 吴晓波. 一种低功耗高电源抑制比亚阈值基准电压源[J]. 微电子学与计算机, 2018, 35(8): 109-112, 116. DOI：

YANG Yi-dan, ZHAO Meng-lian, LIU Sheng, et al. A Low Power and High Power Supply Rejection Ratio Voltage Reference Based on Subthreshold[J]. 2018, 35(8): 109-112. DOI：

摘要

本文针对传统带隙基准功耗高、电源抑制比低的问题

提出了一种适用于能量采集、无线传感网络等的低功耗、高电源抑制比和宽电源电压范围的亚阈值基准电压源.该基准源通过采用非对称共栅极自级联电流镜结构结合负反馈提高了电压源的电源抑制比和线性调整率.电路采用Global Foundry 0.18 μm BCD工艺设计

仿真结果表明:基准电压源的电源电压范围为2.7~5.5 V

输出电压为1.2 V

功耗最低可达446.2 nW; 在3.3 V电源电压下、-40~125℃的温度范围内

温度系数为30.3 ppm; 室温下线性调整率低至0.013%/V; 在100 Hz处电源抑制比为-75 dB.

Abstract

To solve the problem of high power consumption and low power supply rejection ratio(PSRR) in traditional bandgap reference

a subthreshold reference voltage source for low power consumption

high PSRR and wide power supply voltage range is presented in this paper

applying for systems such as energy harvesting and wireless sensor networks

etc. The reference enhances the PSRR and linearity regulation of the voltage source through the Asymmetric Self-Cascode current mirror andnegative feedback. Designed in the Global Foundry 0.18 μm BCD process

the simulation results show that the reference circuit is able to operate under a supply voltage range of 2.7~5.5 V

the output reference voltage is 1.2 V and the lowest power consumption is 446.2 nW. Under 3.3 V power supply voltage

the temperature coefficient is 30.3 ppm in a temperature range from -40℃ to 125℃. The linear adjustment rate at room temperature is 0.013%/V. The PSRR is -75 dB at 100 Hz frequency.

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references

Ueno K, Hirose T, Asai T, et al. A 300 nW, 7 ppm/℃ CMOS voltage reference circuit based on subthreshold Mosfets [C]// Proceed ASP-DAC. 2009: 95-96.

Zeki A, Kuntman H. High-linearity low-voltage self-cascode class AB CMOS current output stage [C]// Proceed ISCAS, Geneva. 2000: 257-260.

De Souza M, Pavanello M A, FLANDRE D. Advantages of subthreshold operation of asymmetric self-cascode SOI transistors aiming at analog circuit applications [C]// IEEE S3S. 2015: 1-3.

Hirose T, Ueno K, Kuroki N, et al. A CMOS bandgap and sub-bandgap voltage reference circuits for nanowatt power LSIs [C]// IEEE A-SSCC, Asian. 2010: 1-4.

Colombo D, Werle F, Wirth G, et al. A CMOS 25.3 ppm/C bandgap voltage reference using self-cascode composite transistor [C]// IEEE LASCAS, 2012: 1-4.

Cao T, Han Y, Liu X, et al. A 0.9-V high-PSRR bandgap with self-cascode current mirror [C]// IEEE ICCAS. 2012: 267-271.

Annema A J. Low-power bandgap references fea-turing DTMOSTs [J]. IEEE J Sol Sta Circ, 1999, 34(7): 949-955. DOI: 949

Far A. A 400nW CMOS bandgap voltage reference [C]// IEEE ICEESE. 2013: 15-20.

Far A. A 220nA bandgap reference with 80dB PSRR targeting energy harvesting [C]// IEEE CCECE, Canada. 2016: 1-4.

Vullers R J M, Schaijk R V, Doms I, et al. Micropower energy harvesting [J]. Sol Sta Elec, 2009, 53(7): 684-693. DOI: 684

朱智勇, 段吉海, 邓进丽, 等.一种高性能超低功耗亚阈值基准电压源[J].微电子学, 2016, 46(6): 740-745. DOI: 740

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