一种宽电压范围电流基准的设计

雷婉; 吴龙盛; 李婷; 时光; 李倩敏

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一种宽电压范围电流基准的设计

更新时间：2026-09-04

- 一种宽电压范围电流基准的设计
- Design of a current reference with wide voltage range
- 微电子学与计算机 2020年37卷第8期页码：49-54
- 作者机构：
  
  西安微电子技术研究所,陕西,西安,710054
- 作者简介：
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- 纸质出版：2020
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雷婉, 吴龙盛, 李婷, 时光, 李倩敏. 一种宽电压范围电流基准的设计[J]. 微电子学与计算机, 2020, 37(8): 49-54.

LEI Wan, WU Long-sheng, LI Ting, et al. Design of a current reference with wide voltage range[J]. 2020, 37(8): 49-54.
雷婉, 吴龙盛, 李婷, 时光, 李倩敏. 一种宽电压范围电流基准的设计[J]. 微电子学与计算机, 2020, 37(8): 49-54. DOI：

LEI Wan, WU Long-sheng, LI Ting, et al. Design of a current reference with wide voltage range[J]. 2020, 37(8): 49-54. DOI：

摘要

本文针对电流基准功耗大、电源电压范围窄的问题，设计了一款同时具备低功耗、宽电压范围、低温度系数的CMOS基准电流源.基准电流由PTAT电流和CTAT电流按一定比例系数相加产生，表现出与温度无关的特性.使用基于CMOS亚阈值特性的运放和自级联电流镜，扩大了电源电压范围，降低了电路整体功耗，提升了电路性能.电路基于XFAB 0.35 m CMOS工艺进行设计，结果表明，基准电流为5 A，在-25℃~125℃温度范围内，温漂系数为40 ppm/℃，电源电压为2.5 V~6 V，功耗为25 A.

Abstract

With the problem of large power consumption of current reference and narrow supply voltage range

a CMOS reference current source with low power consumption

wide voltage range and low temperature coefficient is proposed.The reference current is generated by adding a certain proportional coefficient between the PTAT and the CTAT current

exhibiting temperature-independent characteristics. Based on CMOS sub-threshold op amps and self-cascading current mirror

it expands the supply voltage range

reduces overall circuit power consumption

and improves circuit performance. The circuit is designed based on the XFAB 0.35 m CMOS process. The result show that the reference current is 5 A

the temperature drift coefficient is 40ppm/℃ in the temperature range of -25℃~125℃

the power supply voltage is 2.5 V~6 V

and the power consumption is 25 A.

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references

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