1. 中国科学院微电子研究所 机构,北京,100029
2. 中国科学院大学 机构,北京,101408
3. 杭州中科微电子有限公司,浙江,杭州,310053
纸质出版:2021
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赵鹏飞, 甘业兵. 一种宽电源电压范围的电流基准电路[J]. 微电子学与计算机, 2021, 38(6): 72-76.
ZHAO Peng-fei, GAN Ye-bing. A current reference topology with wide supply voltage range[J]. 2021, 38(6): 72-76.
提出了一种新型带隙基准结构,该电路结构用于在大范围电源电压下产生高精度与温度成正比的电流源.通过将三极管作为运放的输入端,预先产生一个与温度成正比的电压差,来降低运算放大器失调电压的影响,同时降低带隙基准电路对电源电压的要求.通过0.18m CMOS工艺搭建电路进行功能与性能的仿真验证,仿真结果表明该电路在电源电压从1.1V变化到4.8V,输出为2A时,电流偏差不到2nA,电源抑制比达到100dB.在用于温度测量时可以显著减小由电源电压变化引起的误差.
A solution applied to bandgap reference topology was proposed. It aimed to solve current mode bandgap reference circuit that can produce a current proportional to absolute temperature with a wide supply voltage. With bipolars acting as the input transistors and producing a PTAT voltage
this circuit can reduce the offset voltage of operational amplifiers
furthermore operate with a low supply voltage. This circuit was designed with a 0.18m 3.3V CMOS process. The simulation results showed that in a supply voltage range of 1.1 ~ 4.8V
the current is about 2A with maxim 2nA error and 100dB PSRR. The circuit can be used to bias temperature measure circuit and significantly reduce the effect of the supply voltage variation.
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